以SnO_2纳米颗粒为敏感电极的阻抗型氢气传感器的研究

英文篇名：Research of the impedance hydrogen sensors for SnO_2 as the sensing material
中文刊名：功能材料
英文刊名：Journal of Functional Materials
作者：赵兵建 ; 王岭 ; 何承 ; 戴磊
英文作者：ZHAO Bing-jian1 ; WANG Ling1 ; HE Cheng2 ; DAI Lei1(1.College of Chemical Engineering ; Hebei Union University ; Tangshan 063009 ; China ; 2.School of Chemical Engineering and Environment ; Beijing Institute of Technology ; Beijing 100081 ; China)
中文关键词：SnO2 ; CGO ; 氢气传感器 ; 阻抗值
英文关键词：SnO2 ; CGO ; hydrogen sensors ; impedance
出版日期：2011-11-20
机构：河北联合大学化学工程学院;北京理工大学化工与环境学院;
年：2011
期：S5
出版单位：功能材料

摘要

采用浸渍法在Ce0.9Gd0.1O1.95(CGO)固体电解质骨架中制备敏感材料SnO2,并组装成氢气传感器。利用XRD、SEM对氢气传感器的相组成及微观形貌进行表征,采用IM6e型电化学工作站对传感器气敏性能进行测试。结果表明浸渍法制备的敏感材料SnO2颗粒细小,约为400nm左右;在400~550℃时,传感器阻抗值随氢浓度的增加而减小,且传感器信号与氢气浓度表现出非常良好的线性关系。随着温度升高,传感器的信号响应速度逐渐增加,在550℃、氢浓度为1.0×10-3时,其90%的响应时间为170s。
The sensing material SnO2 was made in the framework of the solid electrolyte Ce0.9Gd0.1O1.95(CGO) by using the infiltrating way,and hydrogen sensors were fabricated.The morphology and phase composition of hydrogen sensors were observed by XRD and SEM.The gas sensing properties of the sensors were measured by IM6e electrochemical workstation.The results showed that the particle size of sensing material SnO2 was about 400nm.The impedances of sensors obviously were decreasing with increasing H2 concentrations at 400-550℃.The sensors response and H2 concentrations showed good linear relationship.The response signal rate of sensors was gradually promoting with increasing temperatures.At 550℃,90% response time of sensors signal was about 170s with H2 concentrations at 1.0×10-3.

引文

[1]Weng Yuching,Hung Kunchieh.[J].Sensors and Actua-tors B,2009,144(1):161-167.
    [2]Korotcenkov G,Han S D,Stetter J R.[J].Chem Rev,2009,109:1402-1433.
    [3]李敏莉,梁久亮,张朝明.[J].地震学刊,2002,22(3):26-29.
    [4]刘跃先,欧阳琨,徐晓光.[J].中国仪器仪表,2000,4:28-31.
    [5]Iwahara H,Uchida H,Ogaki K,et al.[J].Journal ofThe Electrochemical Society,1991,138:295-299.
    [6]Lu G,Miura N,Yamazoe N.[J].Sensors and ActuatorsB,1996,35-36:130-135.
    [7]Inaba T,Saji K,Takahashi H.[J].Electrochemistry,1999,67:458.
    [8]Kosacki I,Anderson H U.[J].Sens Actuators B,1998,48:263.
    [9]Martin L P,Glass R S.[J].Journal of the Electrochemi-cal Society,2005,152:43-47.
    [10]Praveen K Sekhar,Eric L Brosha,Rangachary Mukun-dan,et al.[J].Sensors and Actuators B,2010,148(2):469-477.
    [11]Lane J A,Kilner J A.[J].Solid State Ionics,2000,27:136-137.
    [12]Taniguchi N,Kuroha T,Nishimura C,et al.[J].SolidState Ionics,2005,176(39-40):2979-2983.
    [13]郭红霞,吕敬德,王岭,等.[J].无机化学学报,2008,4:1631-1635.
    [14]Tad J A,Jare G R.[J].Journal of the American Ceram-ic Society,2006,153(3):515-520.
    [15]Huang Y Y,Vohs M,Raymond J G,et al.[J].Journalof the American Ceramic Society,2004,87:171-176.
    [16]Ying Y H,John M V,Raymond J G.[J].Journal of theElectrochemical Society,2006,(153)6:951-955.
    [17]Kannan S,Rieth L,Solzbacher F.[J].Sensors and Ac-tuators B,2010,149:8-19.