Temperature sensitivity analysis of dopingless charge-plasma transistor

详细信息    查看全文

• 作者：Vishwas Shrivastava ; Anup Kumar ; Chitrakant Sahu ; ^{chitrakant@iiitdmj.ac.in" class="auth_mail" title="E-mail the corresponding author} ; Jawar Singh
• 关键词：Charge-plasma ; Doping-less ; Random dopant fluctuation (RDF) ; Sensitivity ; Simulation ; Variability
• 刊名：Solid State Electronics
• 出版年：2016
• 出版时间：March 2016
• 年：2016
• 卷：117
• 期：Complete
• 页码：94-99
• 全文大小：2177 K

文摘

The junctionless field-effect transistors (JLFETs) have shown potential to scale down in sub-10 nm regime due to simplified fabrication process and less short-channel effects (SCEs), however, sensitivity towards process parameter variation is a major concern. Therefore, in this paper, sensitivity towards temperature variation of recently proposed dopingless (DL) double-gate field-effect transistor (DGFET) and JL-DGFET is reported. Different digital and analog performance metrics were considered and compared for both devices of similar geometries. We observed that the drive current of DL-DGFET decreases with temperature, while, it increases in JL-DGFET because both devices are affected by different scattering mechanisms at higher temperature. The variation in 110115003299&_mathId=si35.gif&_user=111111111&_pii=S0038110115003299&_rdoc=1&_issn=00381101&md5=f8fc3afe451c588eb601c17d75015ce3" title="Click to view the MathML source">I_ON$I_{\text{ON}}$ and 110115003299&_mathId=si37.gif&_user=111111111&_pii=S0038110115003299&_rdoc=1&_issn=00381101&md5=6b992c963ecdb07e7af19eeabe96225e" title="Click to view the MathML source">I_OFF$I_{\text{OFF}}$ in DL-DGFET are only 0.095 110115003299&_mathId=si28.gif&_user=111111111&_pii=S0038110115003299&_rdoc=1&_issn=00381101&md5=9c6bbb644ffa9569cf8dbc04c776ca22" title="Click to view the MathML source">μ$\mathrm{\mu }$A/K and 0.2 110115003299&_mathId=si44.gif&_user=111111111&_pii=S0038110115003299&_rdoc=1&_issn=00381101&md5=47b2fa015895f159dcb6f019e1054141" title="Click to view the MathML source">nA/K$\text{nA}/\text{K}$, respectively, while, in JL-DGFET the changes are 0.25 110115003299&_mathId=si28.gif&_user=111111111&_pii=S0038110115003299&_rdoc=1&_issn=00381101&md5=9c6bbb644ffa9569cf8dbc04c776ca22" title="Click to view the MathML source">μ$\mathrm{\mu }$A/K and 0.34 110115003299&_mathId=si44.gif&_user=111111111&_pii=S0038110115003299&_rdoc=1&_issn=00381101&md5=47b2fa015895f159dcb6f019e1054141" title="Click to view the MathML source">nA/K$\text{nA}/\text{K}$, respectively, above room temperature. Below room temperature, it was found that the incomplete ionization effect in JL-DGFET severely affects the drive current, however, DL-DGFET remains unaffected. Hence, the proposed DL-DGFET is less sensitive towards temperature variation and can be employed for cryogenics to high temperature applications.