Synthesis of nano-crystalline germanium carbide using radio frequency magnetron sputtering
详细信息 查看全文
- 作者：Neeti Gupta ; neeti.gupta@student.unsw.edu.au" class="auth_mail" title="E-mail the corresponding author ; neeti.gupta30@gmail.com" class="auth_mail" title="E-mail the corresponding author ; Binesh Puthen Veettil ; Hongze Xia ; Siva Krishna Karuturi ; Gavin Conibeer ; Santosh Shrestha
- 关键词：Nano-crystalline ; Germanium carbide ; Sputtering ; Absorber ; X-ray photoelectron spectroscopy ; Transmission electron microscopy
- 刊名：Thin Solid Films
- 出版年：2015
- 出版时间：1 October 2015
- 年：2015
- 卷：592
- 期：part_PA
- 页码：162-166
- 全文大小：937 K
文摘
- •
Nano-crystalline GexC1 − x films were grown at 350 °C on Si (100) substrates.
- •
Maximum 15.5% of GexC1 − x is found using Levenberg–Marquardt peak analyser algorithm.
- •
Transmission electron microscopy image shows the formation of nano-crystal of 5.53 Å.
- •
Local Ge–C mode is identified near 530 cm− 1 in GexC1 − x film using Raman spectroscopy.