Nano-crystalline GexC1 − x films were grown at 350 °C on Si (100) substrates.
Maximum 15.5% of GexC1 − x is found using Levenberg–Marquardt peak analyser algorithm.
Transmission electron microscopy image shows the formation of nano-crystal of 5.53 Å.
Local Ge–C mode is identified near 530 cm− 1 in GexC1 − x film using Raman spectroscopy.