Inverse-magnetostriction-induced switching current reduction of STT-MTJs and its application for low-voltage MRAM

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• 作者：Yota Takamura^a ; ^{takamura@ee.e.titech.ac.jp} ; Yusuke Shuto^b ; Shu'uichiro Yamamoto^b ; Hiroshi Funakubo^c ; Minoru Kuribayashi Kurosawa^a ; Shigeki Nakagawa^a ; Satoshi Sugahara^a ; ^b
• 刊名：Solid-State Electronics
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：128
• 期：Complete
• 页码：194-199
• 全文大小：1575 K
• 卷排序：128

文摘

A new spin-transfer torque (STT) magnetic tunnel junction (MTJ) using an inverse magnetostriction (IMS) material for the free layer is proposed for low-voltage MRAMs. The MTJ is surrounded by a piezoelectric gate structure so that a pressure for introducing the IMS effect can efficiently be applied to the free layer without any high-yield-strength support structure. During STT-induced magnetization switching, the energy barrier height for the switching can be lowered by the IMS effect, and thus a critical current density (JC) for the magnetization switching can dramatically be reduced. Energy performance of a low-voltage STT-MRAM cell using the proposed MTJ and a FinFET is also demonstrated.