Influence of induced defects on transport properties of the Bridgman-grown Bi2Se3-based single crystals
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- 作者：K.K. Wua ; b ; B. Ramachandrana ; Y.K. Kuoa ; ykkuo@mail.ndhu.edu.tw" class="auth_mail" title="E-mail the corresponding author ; R. Sankarb ; F.C. Choub
- 关键词：Intermetallics ; Crystal growth ; Thermoelectric ; Vacancy formation ; Point defects ; X-ray diffraction
- 刊名：Journal of Alloys and Compounds
- 出版年：2016
- 出版时间：15 October 2016
- 年：2016
- 卷：682
- 期：Complete
- 页码：225-231
- 全文大小：997 K
文摘
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The initial Bi-Se ratio has an influence on the growth habit of Bi2Se3 crystals.
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Structural and physical properties of the crystals depend on their growth nature.
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The different growth mechanism for the Bi2Se3-based single crystals was described.
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The grown n-type crystals are weak metals with the Fermi energy of <0.5 eV.
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The near-stoichiometric crystals have the figure of merit of about ∼0.12 at 300 K.