Steady distribution structure of point defects near crystal-melt interface under pulling stop of CZ Si crystal

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• 作者：T. Abe^a ; ^{takao.abe@seh.jp} ; T. Takahashi^a ; K. Shirai^b
• 关键词：Vacancies ; Interstitials ; Thermal gradient ; Voids ; Dislocationloops ; Growth from melt
• 刊名：Journal of Crystal Growth
• 出版年：2017
• 出版时间：1 February 2017
• 年：2017
• 卷：459
• 期：Complete
• 页码：87-94
• 全文大小：1022 K
• 卷排序：459

文摘

Growth interface of CZ crystal can have recombination region to be directly contact with Si melt. Recombination region is always formed at boundary between dislocation loop and vacancy region. Interstitials are generated at region near growth interface where thermal stress is increased.