Structural and optical study of BInGaAs/GaAs quantum wells grown by MOVPE emitting above 1.1 eV
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- 作者：Radhia Hamilaa ; radhiahamila@yahoo.fr" class="auth_mail" title="E-mail the corresponding author ; Faouzi Saidia ; Philippe Rodriguezb ; Laurent Auvrayb ; Hassen Maarefa
- 关键词：BInGaAs ; HRXRD ; MOVPE ; PL ; Solar cell
- 刊名：Microelectronic Engineering
- 出版年：2016
- 出版时间：5 January 2016
- 年：2016
- 卷：149
- 期：Complete
- 页码：5-8
- 全文大小：498 K
文摘
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Structural and optical BInGaAs/GaAs quantum well properties, grown by metal organic vapor phase epitaxy (MOVPE).
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At room temperature (300 K) PL band range 1.19 and 1.14 eV of the emission energies.
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BInGaAs QWs offer the new band gap energy which can be used in multi-junction solar cell.