Temperature dependence of the character of AlN nucleation layer grown on SiC substrates by MOCVD

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• 作者：Dongguo Zhang ; Zhonghui Li ; ^{dongguozh@126.com} ; Daqing Peng ; Xun Dong ; Chuanhao Li
• 关键词：MOCVD ; AlN ; Raman shift ; HRXRD ; Roughness ; Crystalline quality
• 刊名：Superlattices and Microstructures
• 出版年：2016
• 出版时间：November 2016
• 年：2016
• 卷：99
• 期：Complete
• 页码：104-107
• 全文大小：630 K
• 卷排序：99

文摘

A reduction in the surface pits with increasing growth temperature is discovered, as detected in AFM measurements. When the growth temperature of the AlN layer was increased to 1220 °C, the surface was very smooth with a root-mean-square (RMS) value of 0.354 nm. By enhancing the growth temperature, the in-plane strain can be adjusted from tensile to compressive, thus enabling the growth of thick in-plane strain-free AlN layers on SiC, and the density of TDs in AlN layers epitaxially grown on SiC substrates can be significantly reduced.