文摘
A reduction in the surface pits with increasing growth temperature is discovered, as detected in AFM measurements. When the growth temperature of the AlN layer was increased to 1220 °C, the surface was very smooth with a root-mean-square (RMS) value of 0.354 nm. By enhancing the growth temperature, the in-plane strain can be adjusted from tensile to compressive, thus enabling the growth of thick in-plane strain-free AlN layers on SiC, and the density of TDs in AlN layers epitaxially grown on SiC substrates can be significantly reduced.