Study of diffusion at surface of multilayered Cu/Au films on monocrystalline silicon

详细信息    查看全文

• 作者：Benazzouz ; C. ; Benouattas ; N. ; Iaiche ; S. ; Bouabellou ; A.
• 关键词：Gold ; Silicon ; Copper silicides ; Morphology ; Backscattering spectrometry ; Scanning electron microscopy ; X-ray diffraction
• 刊名：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
• 出版年：2004
• 出版时间：January, 2004
• 年：2004
• 卷：213
• 期：Complete
• 页码：519-522
• 全文大小：316 K

文摘

Multilayered of pure gold and copper films were evaporated alternatively on (100) monocrystal silicon substrates. Annealing, in a furnace vacuum, were carried out at 200 and 400 °C for 30 min. The obtained samples were analyzed by means of Rutherford backscattering spectrometry, X-ray diffraction and scanning electron microscopy techniques. The interdiffusion of the different elements and the thermodynamic transformations at Cu/Au and Au/Si interfaces have been investigated.