Spin-injection into epitaxial graphene on silicon carbide

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• 作者：Keita Konishi ; Zhixin Cui ; Takahiro Hiraki ; Kanji Yoh
• 关键词：A1. Low dimensional structures ; A1. Silicon carbide ; B1. Graphene ; B3. Spin-injection
• 刊名：Journal of Crystal Growth
• 出版年：2013
• 出版时间：1 September, 2013
• 年：2013
• 卷：378
• 期：Complete
• 页码：385-387
• 全文大小：1194 K

文摘

We have studied the spin-injection properties in epitaxial graphene on SiC. The ferromagnetic metal (FM) electrodes were composed of a tunnel barrier layer AlO_x (14 ?) and a ferromagnetic Co (600 ?) layer. We have successfully observed the clear resistance peaks indicating spin-injection both in the ¡°local¡± and ¡°non-local¡± spin measurement set-ups at low temperatures. We estimate spin-injection rate of 1 % based on ¡°non-local¡± measurement and 1.6 % based on local measurements. Spin-injection rate of multilayer graphene by mechanical exfoliation method was twice as high as single layer graphene on SiC based on ¡°local¡± measurement.