C₆₀ layer growth on the Co/Si(1 1 1) surface

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• 作者：D.A. Olyanich ; T.V. Utas ; V.G. Kotlyar ; A.V. Zotov ; A.A. Saranin ; L.N. Romashev ; N.I. Solin ; V.V. Ustinov
• 关键词：68.43.Hn ; 68.37.Ef ; 68.43.Bc
• 刊名：Applied Surface Science
• 出版年：15 February, 2014
• 年：2014
• 卷：292
• 期：Complete
• 页码：954-957
• 全文大小：1820 K

文摘

The system of C₆₀ layer on Si(1 1 1)-Co surface has a negligible lattice mismatch and with the designed two-step procedure which allows formation of the highly ordered Si(1 1 1)-Co surface with domain size of 鈭?00 nm, one could expect to achieve a perfect epitaxial growth of C₆₀ molecular layer. However, using scanning tunneling microscopy observations we have found that regular C₆₀ arrays grown on such a promising surface typically do not exceed the size of 鈭?0 nm. It has been recognized that the main reason for lacking the long-range ordering in the C₆₀ layer is occurrence of several adsorption sites within the  unit cell.