Processing of microstrip detectors on Czochralski grown high resistivity silicon substrates
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- 作者：Hä ; rkö ; nen ; J. ; Tuominen ; E. ; Tuovinen ; E. ; Mehtä ; lä ; P. ; Lassila-Perini ; K. ; et. al.
- 关键词：71.55.Cn ; Cz-Si ; Detector ; Radiation hardness
- 刊名：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
- 出版年：2003
- 出版时间：November 21, 2003
- 年：2003
- 卷：514
- 期：1-3
- 页码：173-179
- 全文大小：223 K
文摘
We have processed large-area strip sensors on silicon wafers grown by the magnetic Czochralski (MCZ) method. The n-type MCZ silicon wafers manufactured by Okmetic Oyj have nominal resistivity of 900Ωcm and oxygen concentration of less than 10ppma. The Photoconductive Decay (PCD) measurements, current–voltage measurements and capacitance–voltage measurements were made to characterise the samples. The leakage current of 3μA at 900V bias voltage was measured on the 32.5cm2 detector. Detector depletion took place at about 420V. According to PCD measurements, process induced contamination was effectively bound and neutralised by the oxygen present in Czochralski silicon. During the sample processing, the silicon resistivity increased in spite of the lack of specific donor-killing heat treatment.