Electroluminescence of GaNAs/GaAs MQWs p-i-n junctions grown by RF-MBE using modulated nitrogen radical beam source
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- 作者：Natsumi Ohta ; Kohei Arimoto ; Masahiro Shiraga ; Kenta Ishii ; Masatoshi Inada ; Shunsuke Yanai ; Yuko Nakai ; Hidefumi Akiyama ; Toshimitsu Mochizuki ; Toshio Takahashi ; Naoshi Takahashi ; Hayato Miyagawa ; Noriaki Tsurumachi ; Shunsuke Nakanishi ; Shyun Koshiba
- 关键词：A3. Molecular beam epitaxy ; B1. Nitrides ; B2. Semiconducting III&ndash ; V materials
- 刊名：Journal of Crystal Growth
- 出版年：2013
- 出版时间：1 September, 2013
- 年：2013
- 卷：378
- 期：Complete
- 页码：150-153
- 全文大小：481 K
文摘
We have investigated the electrical and optical properties of p-i-n junction structures in which un-doped GaNAs/GaAs multiple quantum wells (MQWs) were sandwiched by p- and n-doped GaAs layers. The samples were formed on the GaAs (001) substrates by plasma assisted molecular beam epitaxy (RF-MBE) using the modulated N radical beam method. We have prepared several samples for various GaNAs MQW structures. The electroluminescence (EL) measurements showed slightly different spectra to those of photoluminescence (PL) and the EL intensities were almost proportional to the applied currents. The room temperature EL measurement revealed strong electron confinement of GaNAs/GaAs MQW.