Dopant profiling based on scanning electron and helium ion microscopy
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- 作者：Augustus K.W. Cheea ; kwac2@cam.ac.uk" class="auth_mail" title="E-mail the corresponding author ; Stuart A. Bodenb
- 关键词：Doping contrast ; Secondary electron energy filtering ; Sensitivity limit ; Electric potentials ; Escape depth ; P&ndash ; n junction ; Surface band-bending
- 刊名：Ultramicroscopy
- 出版年：2016
- 出版时间：February 2016
- 年：2016
- 卷：161
- 期：Complete
- 页码：51-58
- 全文大小：6322 K
文摘
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Strong doping contrast from n-type regions in the SHIM without energy-filtering.
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Sensitivity limits are established of the SHIM and SEM techniques.
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We discuss the impact of SHIM imaging conditions on quantitative dopant profiling.
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Doping contrast stems from different surface layer thicknesses in the SHIM and SEM.