Dark properties and transient current response of Si_0.95Ge_0.05 n+p devices

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• 作者：Ruzin ; Arie ; Marunko ; S. ; Abrosimov ; N.V. ; Riemann ; H.
• 关键词：07.85.Nc ; 29.40.Wk ; 71.20.Nr ; Si ; SiGe ; TCT ; Detectors ; Pin devices
• 刊名：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
• 出版年：2004
• 出版时间：February 1, 2004
• 年：2004
• 卷：518
• 期：1-2
• 页码：373-375
• 全文大小：173 K

文摘

In this study we present the dark properties of ‘pin’ devices fabricated with Czochralski grown Si_0.95Ge_0.05 bulk single crystals. The growth of such material is most challenging because of the constitutional supercooling effect. The potential advantages of Si_1−xGe_x to be used for X- and gamma-ray detection applications are overviewed. At room temperature the generation current in the devices is too high for spectroscopy applications, but enables transient current technique (TCT) measurements. The current however drops significantly with moderate cooling. The effective majority carrier concentration is shown to be 2×10¹⁴cm⁻³, and hole mobility 320cm²/Vs.