Growth and characterization of InAs/InAsSb superlattices by metal organic chemical vapor deposition for mid-wavelength infrared photodetectors
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- 作者：Zhen-Dong Ninga ; ningzd@semi.ac.cn" class="auth_mail" title="E-mail the corresponding author ; Shu-Man Liub ; liusm@semi.ac.cn" class="auth_mail" title="E-mail the corresponding author ; Shuai Luob ; Fei Renb ; Fengjiao Wangb ; Tao Yangb ; Feng-Qi Liub ; Zhan-Guo Wanga ; b ; Lian-Cheng Zhaoa
- 关键词：Epitaxial growth ; Thin films ; Temperature-dependent ; Photoluminescence.
- 刊名：Materials Letters
- 出版年：2016
- 出版时间：1 February 2016
- 年：2016
- 卷：164
- 期：Complete
- 页码：213-216
- 全文大小：1083 K
文摘
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High quality mid-infrared InAs/InAsSb superlattices were grown on GaSb by MOCVD.
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Temperature-dependent Raman scattering was investigated for InAs/GaSb.
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First-order temperature coefficients of Raman modes of InAs/GaSb were observed.