Deposition of a polycrystalline GaN layer on a porous Si/Si substrate by an electron beam evaporator with a successive ammonia annealing treatment
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- 作者：M.E.A. Samsudin ; N. Zainal ; norzaini@usm.my" class="auth_mail" title="E-mail the corresponding author ; Z. Hassan
- 关键词：Polycrystalline GaN ; Porous Si substrate ; Electron beam evaporator ; Post-annealing ; Dislocations defects reduction
- 刊名：Journal of Alloys and Compounds
- 出版年：2017
- 出版时间：5 January 2017
- 年：2017
- 卷：690
- 期：Complete
- 页码：397-402
- 全文大小：1575 K
文摘
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The size of the Si pores increases with etching time.
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Polycrystalline GaN was formed when the samples were subjected to the NH3 annealing.
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30 min-etched porous Si gives the best properties to the polycrystalline GaN.