New trench gate power MOSFET with high breakdown voltage and reduced on-resistance using a SiGe zone in drift region

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• 作者：Mahsa Mehrad ; Ali A. Orouji ; ^{aliaorouji@ieee.org}
• 关键词：Breakdown voltage ; On-resistance ; Trench gate MOSFET ; SiGe zone ; Buried oxide (BOX)
• 刊名：Current Applied Physics
• 出版年：2012
• 出版时间：September, 2012
• 年：2012
• 卷：12
• 期：5
• 页码：1340-1344
• 全文大小：611 K

文摘

High breakdown voltage and reduced on-resistance are desired characteristics in power MOSFETs. In order to obtain an excellent performance of Trench Gate Power MOSFET, we have proposed a new structure in which a SiGe zone is incorporated in the drift region to reduce on-resistance. Also, the buried oxide is considered in the drift region that surrounds the SiGe zone to increase breakdown voltage. The proposed structure is called a SiGe Zone Trench Gate MOSFET (SZ-TG). Our simulation with two dimensional simulator shows that by reducing an electric field and controlling the effects of parasitic BJT transistor in the SZ-TG structure, we can expand power applications of trench gate power structures.