The use of Ga₁₆Sb₈₄ alloy for electronic phase-change memory

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• 作者：Chih-Chung Chang^a ; Chien-Tu Chao^b ; Jong-Ching Wu^b ; Tri-Rung Yew^a ; ^{tryew@mx.nthu.edu.tw} ; Ming-Jinn Tsai^c ; Tsung-Shune Chin^a ; ^d ; ^{tschin@fcu.edu.tw}
• 关键词：Phase-change material ; Ga– ; Sb alloys ; Crystallization ; Electrical properties ; Thermal stability
• 刊名：Scripta Materialia
• 出版年：2011
• 出版时间：May 2011
• 年：2011
• 卷：64
• 期：9
• 页码：801-804
• 全文大小：469 K

文摘

The use of simpler compositions for phase-change memory has been a popular goal. This study explores phase-change, electrical conduction and thermal stability of Ga₁₆Sb₈₄ film to meet this purpose. Amorphous Ga₁₆Sb₈₄ film shows a crystallization temperature of 227 °C and a temperature for 10 year data retention of 148 °C. The density of the film increases 5 % upon crystallization. A steep resistance drop during crystallization arises mainly from the sharp increase in carrier concentration with p-type conduction. Ga₁₆Sb₈₄ memory cells demonstrate set–reset switching at a pulse width of 10 ns and have a durability of >10⁵ cycles.