ar0005">Double light emitting diodes were fabricated by introducing an In0.17Al0.83N interlayer in n-ZnO/p-GaN heterojunction.
ar0010">The reverse leakage current was reduced by introducing the In0.17Al0.83N interlayer.
ar0015">The electroluminescence spectra of the n-ZnO/In0.17Al0.83N/p-GaN heterojunctions were dominated by p-GaN emissions under forward biases and n-ZnO emissions under reverse biases.