External electric field effect on exciton binding energy in InGaAsP/InP cylindrical quantum wires

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• 作者：Hailong Wang^a ; ^{hlwang@mail.qfnu.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; ^{phyhlwang71@126.com" class="auth_mail" title="E-mail the corresponding author} ; Wenjuan Wang^a ; Qian Gong^b ; Shumin Wang^b
• 关键词：InGaAsP/InP ; Exciton binding energy ; External electric field ; Quantum wire ; Stark shift ; Variational method
• 刊名：Physica B: Physics of Condensed Matter
• 出版年：2016
• 出版时间：15 December 2016
• 年：2016
• 卷：503
• 期：Complete
• 页码：117-120
• 全文大小：392 K

文摘

Exciton binding energies in InGaAsP/InP cylindrical quantum wires are calculated through variational method under the framework of effective-mass envelope-function approximation. It is shown that the variation of exciton binding energy is highly dependent on radius of the wire, material composition and external electric field. Exciton binding energy is a non-monotonic function of wire radius. It increases until it reaches a maximum, and then decreases as the wire radius decreases. With the increase of In composition, the wire radius need increase to reach the maximum value of exciton binding energy. It is also found that the external electric field has little effect on exciton binding energy. However, the excitonic effect will be destroyed when external electric field is large enough. In addition, the Stark shift of exciton binding energy is also calculated.