Diamond nanocrystals and amorphous SiO_x nanowires formed by rapid thermal annealing of carbon film

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• 作者：Xingbo Liang ; Lei Wang ; Xiaoqiang Li ; Deren Yang
• 关键词：Diamond ; Silicon oxide ; Annealing ; Carbon
• 刊名：Thin Solid Films
• 出版年：2007
• 出版时间：13 June 2007
• 年：2007
• 卷：515
• 期：17
• 页码：6707-6712
• 全文大小：906 K

文摘

Rapid thermal annealing (RTA) has been performed on the carbon films prepared by radio frequency plasma-enhanced chemical vapor deposition on Si substrate. The RTA at 800 °C for 60 s leads to the formation of many diamond nanocrystallites agglomerating on the film surface. Higher temperature RTA at 1100 °C for 60 s induces the high-density amorphous SiO_x (x = 1.2) nanowires on the film surface without diamond nanocrystallites. At both the RTA temperatures, a well-oriented SiC interlayer is also formed simultaneously. The sp³ sites in the carbon film and the oxygen during the RTA treatment as well as the RTA temperature are considered to play important roles in determining the final reaction products.