Polarity Control in 3D GaN Structures Grown by Selective Area MOVPE

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• 作者：Xue Wang ; Shunfeng Li ; S枚nke F眉ndling ; Jiandong Wei ; Milena Erenburg ; Hergo-H. Wehmann ; Andreas Waag ; Werner Bergbauer ; Martin Strassburg ; Uwe Jahn ; Henning Riechert
• 刊名：Crystal Growth & Design
• 出版年：2012
• 出版时间：May 2, 2012
• 年：2012
• 卷：12
• 期：5
• 页码：2552-2556
• 全文大小：282K
• 年卷期：v.12,no.5(May 2, 2012)
• ISSN：1528-7505

文摘

During the metal organic vapor phase epitaxy of GaN microcolumns, both nitrogen- and gallium-polar GaN in the same structures could be detected on patterned SiO_x/sapphire templates. To clarify its origin, the spatial distribution of surface polarity has been analyzed by both Kelvin probe force microscopy and selective etching techniques. A new 鈥渢runcated pyramid + column鈥?growth method was developed to effectively avoid the formation of mixed polarity and realize selective area growth of single N-polar GaN columns. The strong yellow luminescence in mixed polarity structures can substantially be eliminated in single N-polar core鈥搒hell light-emitting diodes.