Reductive Solid Phase Epitaxy of Layered Y2O2Bi with Bi2鈥?/sup> Square Net from (Y, Bi) Powders and Y2O3 Amorphous Thin Film

详细信息    查看全文

• 作者：Ryosuke Sei ; Tomoteru Fukumura ; Tetsuya Hasegawa
• 刊名：Crystal Growth & Design
• 出版年：2014
• 出版时间：September 3, 2014
• 年：2014
• 卷：14
• 期：9
• 页码：4227-4229
• 全文大小：226K
• ISSN：1528-7505

文摘

Ingenious solid phase epitaxy of ThCr₂Si₂-type Y₂O₂Bi thin film with a Bi^{2鈥?/sup> square net was developed. A Y₂O₃ amorphous thin film with Y and Bi powders was heated in two steps under reductive atmosphere on a nonoxide lattice-matched CaF₂ substrate. This procedure was indispensable for the epitaxial growth of Y₂O₂Bi, circumventing the formation of the C-rare earth type (Y,Bi)₂O₃ with Bi3+. Highly oxidizable Y metal was a key to accomplish the unusual reductive state of Bi2鈥?/sup>. The lattice-matched CaF₂ substrate possessing a similar structure to the Y₂O₂2+ unit in Y₂O₂Bi promoted the spontaneous c-axis orientation of the thin film.}