文摘
Vanadium dioxide (VO<sub>2sub>) is a compelling candidate for next-generation electronics beyond conventional silicon-based devices due to the exhibition of a sharp metal–insulator transition. In this study, in order to realize functional VO<sub>2sub> film for flexible electronics, the growth of VO<sub>2sub> film directly on a transparent and flexible muscovite via van der Waals epitaxy is established. The heteroepitaxy and structural transition of VO<sub>2sub> films on muscovite are examined by a combination of high-resolution X-ray diffraction, transmission electron microscopy, and Raman spectroscopy. The unique metal–insulator transition of VO<sub>2sub> is further revealed with a change in electrical resistance over 10<sup>3sup> and a more than 50% variation of optical transmittance. Furthermore, due to the nature of muscovite, the VO<sub>2sub>/muscovite heterostructure possesses superior flexibility and optical transparence. The approach developed in this study paves an intriguing way to fabricate functional VO<sub>2sub> film for the applications in flexible electronics.