Identifying the Numbers of Ag Atoms in Their Nanostructures Grown on a Si(111)-(7 脳 7) Surface

详细信息    查看全文

• 作者：Fangfei Ming ; Kedong Wang ; Xieqiu Zhang ; Jiepeng Liu ; Aidi Zhao ; Jinlong Yang ; Xudong Xiao
• 刊名：Journal of Physical Chemistry C
• 出版年：2011
• 出版时间：March 17, 2011
• 年：2011
• 卷：115
• 期：10
• 页码：3847-3853
• 全文大小：964K
• 年卷期：v.115,no.10(March 17, 2011)
• ISSN：1932-7455

文摘

Using scanning tunneling microscopy, we have conducted an in situ study of the room-temperature growth of Ag structures on a Si(111)-(7 脳 7) surface. By observing the STM images at various Ag coverages, a number of Ag structures were identified in both the faulted and the unfaulted half unit cells. The number of Ag atoms contained in each of these Ag structures was precisely determined through observation of inter-half unit cell diffusion. Transformations between the Ag structures via inter- and intra-half unit cell diffusion provide detailed information for the mechanisms of Ag structure growth. The precision knowledge of the number of atoms in such structures will form a fundamental base for understanding the physical and chemical properties of these structures.