Creating Reversible p–n Junction on Graphene through Ferritin Adsorption

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• 作者：Yana Mulyana ; Mutsunori Uenuma ; Naofumi Okamoto ; Yasuaki Ishikawa ; Ichiro Yamashita ; Yukiharu Uraoka
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：March 30, 2016
• 年：2016
• 卷：8
• 期：12
• 页码：8192-8200
• 全文大小：617K
• ISSN：1944-8252

文摘

An alternative way to construct a stable p–n junction on graphene-based field effect transistor (G-FET) through physical adsorption of ferritin (spherical protein shell) is presented. The produced p–n junction on G-FET could also operate through water-gate. Native ferritins are known to be negatively charged in wet condition; however, we found that native negatively charged ferritins became positively charged after performing electron beam (EB)-irradiation. We utilized this property to construct p–n junction on G-FET. We found also that EB-irradiation could remove the effect of charged impurity adsorbed on graphene layer, thus the Dirac point was adjusted to gate voltage V_g = 0.