文摘
Horizontally aligned growth of single-walled carbon nanotubes (SWNTs) on single-crystal surfaces has attractedgreat interest in terms of nanoelectronic applications, but their growth mechanism is not fully understood.We report on the 13C/12C isotope-labeled growth of SWNTs on a sapphire surface to visualize their growthprocess. Switching carbon feedstock from 13CH4 to 12CH4 during SWNT growth induces a gradient distributionof the carbon isotopes along the tube axis. From the Raman mapping analysis, we succeeded to observe thegradual change in the isotope distribution of individual SWNTs. The results indicate the base-growth modefor the horizontally aligned SWNTs, which suggests that nanotube-sapphire interaction is essential toalignment. This method offers a unique technique to analyze the nanotube growth mechanism and kinetics.