Electronic and Transport Properties of Unbalanced Sublattice N-Doping in Graphene
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- 作者：Aur茅lien Lherbier ; Andr茅s Rafael Botello-M茅ndez ; Jean-Christophe Charlier
- 刊名：Nano Letters
- 出版年：2013
- 出版时间：April 10, 2013
- 年：2013
- 卷：13
- 期：4
- 页码：1446-1450
- 全文大小：915K
- 年卷期：v.13,no.4(April 10, 2013)
- ISSN：1530-6992
文摘
Using both first-principles techniques and a real-space Kubo-Greenwood approach, electronic and transport properties of nitrogen-doped graphene with a single sublattice preference are investigated. Such a breaking of the sublattice symmetry leads to the appearance of a true band gap in graphene electronic spectrum even for a random distribution of the N dopants. More surprisingly, a natural spatial separation of both types of charge carriers at the band edge is predicted, leading to a highly asymmetric electronic transport. Both the presence of a band gap, allowing large on/off ratio, and an asymmetric transport pave a new route toward efficient graphene-based field-effect transistors.