Electronic Properties of Phosphorene/Graphene and Phosphorene/Hexagonal Boron Nitride Heterostructures
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- 作者：Yongqing Cai ; Gang Zhang ; Yong-Wei Zhang
- 刊名：Journal of Physical Chemistry C
- 出版年：2015
- 出版时间：June 18, 2015
- 年：2015
- 卷：119
- 期：24
- 页码：13929-13936
- 全文大小：447K
- ISSN：1932-7455
文摘
Vertical integration of two-dimensional materials has recently emerged as an exciting method for the design of novel electronic and optoelectronic devices. Using density functional theory, we investigate the structural and electronic properties of two heterostructures, graphene/phosphorene (G/BP) and hexagonal boron nitride/phosphorene (BN/BP). We found that the interlayer distance, binding energy, and charge transfer in G/BP and BN/BP are similar. Interlayer noncovalent bonding is predicted due to the weak coupling between the pz orbital of BP and the 蟺 orbital of graphene and BN. A small amount of electron transfer from graphene and BN, scaling with the vertical strain, renders BP slightly n-doped for both heterostructures. Several attractive characteristics of BP, including direct band gap and linear dichroism, are preserved. However, a large redistribution of electrostatic potential across the interface is observed, which may significantly renormalize the carrier dynamics and affect the excitonic behavior of BP. Our work suggests that graphene and BN can be used not only as an effective capping layer to protect BP from its structural and chemical degradation while still maintaining its major electronic characteristics but also as an active layer to tune the carrier dynamics and optical properties of BP.