Bilayered semiconductor graphene nanostructures with periodically arranged hexagonal holes

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• 作者：Dmitry G. Kvashnin ; Péter Vancsó ; Liubov Yu. Antipina ; Géza I. Márk…
• 关键词：gaphene ; antidots ; electronic properties ; DFT
• 刊名：Nano Research
• 出版年：2015
• 出版时间：April 2015
• 年：2015
• 卷：8
• 期：4
• 页码：1250-1258
• 全文大小：2,942 KB
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• 作者单位：Dmitry G. Kvashnin (1)
  Péter Vancsó (2)
  Liubov Yu. Antipina (3)
  Géza I. Márk (2)
  László P. Biró (2)
  Pavel B. Sorokin (1) (3)
  Leonid A. Chernozatonskii (1)
  
  1. Emanuel Institute of Biochemical Physics, 4 Kosigina Street, Moscow, 119334, Russia
  2. Institute of Technical Physics and Materials Science, Research Centre for Natural Sciences, H-1525, Budapest, P.O. Box 49, Hungary
  3. Technological Institute of Superhard and Novel Carbon Materials, 7a Centralnaya Street, Troitsk, Moscow, 142190, Russia
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chinese Library of Science
  Chemistry
  Nanotechnology
  
• 出版者：Tsinghua University Press, co-published with Springer-Verlag GmbH
• ISSN：1998-0000

文摘

We present a theoretical study of new nanostructures based on bilayered graphene with periodically arranged hexagonal holes (bilayered graphene antidots). Our ab initio calculations show that fabrication of hexagonal holes in bigraphene leads to connection of the neighboring edges of the two graphene layers with formation of a hollow carbon nanostructure sheet which displays a wide range of electronic properties (from semiconductor to metallic), depending on the size of the holes and the distance between them. The results were additionally supported by wave packet dynamical transport calculations based on the numerical solution of the time-dependent Schr?dinger equation.