Electrical conduction mechanism in GeSeSb chalcogenide glasses

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• 作者：VANDANA KUMARI ; ANUSAIYA KASWAN ; D PATIDAR…
• 关键词：DC conductivity ; chalcogenide glass ; Sb–Se bonding ; Poole–Frenkel mechanism.
• 刊名：Bulletin of Materials Science
• 出版年：2016
• 出版时间：February 2016
• 年：2016
• 卷：39
• 期：1
• 页码：255-262
• 全文大小：1,221 KB
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• 作者单位：VANDANA KUMARI (1)
  ANUSAIYA KASWAN (1)
  D PATIDAR (1)
  KANANBALA SHARMA (1)
  N S SAXENA (1)
  
  1. Department of Physics, Semi-conductor & Polymer Science Laboratory, Room No. 14-15, University of Rajasthan, Jaipur, 302 004, India
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Materials Science
  Engineering, general
  
• 出版者：Springer India
• ISSN：0973-7669

文摘

Electrical conductivity of chalcogenide glassy system Ge_30−xSe₇₀Sb_x (x = 10, 15, 20 and 25) prepared by melt quenching has been determined at different temperatures in bulk through the I–V characteristic curves. It is quite evident from results that Poole–Frenkel conduction mechanisms hold good for conduction in these glasses in a given temperature range. The variation in electrical conductivity with composition was attributed to the Se–Sb bond concentration in the Se–Ge–Sb system. Results indicated that Ge₅Se₇₀Sb₂₅ showed the minimum resistance. In view of this the composition Ge₅Se₇₀Sb₂₅ may be coined as ‘critical composition’ in the proposed series. Also the activation energies of conduction of these glassy alloys have been calculated in higher and lower temperature range using the Arrhenius equation.