Optical studies of carriers-vertical transport in the alternately-strained ZnS0.4Se0.6/CdSe superlattice

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• 作者：E. A. Evropeytsev ; S. V. Sorokin ; S. V. Gronin ; I. V. Sedova…
• 刊名：Semiconductors
• 出版年：2015
• 出版时间：March 2015
• 年：2015
• 卷：49
• 期：3
• 页码：352-357
• 全文大小：328 KB
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• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Magnetism and Magnetic Materials
  Electromagnetism, Optics and Lasers
  Russian Library of Science
  
• 出版者：MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
• ISSN：1090-6479

文摘

We present the results of theoretical modelling and experimental optical studies of the alternatively-strained CdSe/ZnS y sub>Se1 ?y sub> (y = 0.4) superlattice (SL) with effective band-gap E g sub> eff ?2.580 eV and a thickness of ?00 nm, which was grown by molecular-beam epitaxy on a GaAs substrate. The thicknesses and composition of the layers of the superlattice are determined on the basis of the SL minibands parameters calculated implying both full lattice matching of the SL as a whole to a GaAs substrate and high efficiency of photoexcited carriers transport along the growth axis. Photoluminescence studies of the transport properties of the structure (including a superlattice with one enlarged quantum well) show that the characteristic time of the diffusion of charge carriers at 300 K is shorter than the times defined by recombination processes. Such superlattices seem to be promising for the formation of a wide-gap photoactive region in a multijunction solar cell, which includes both III–V and II–VI compounds.