Photoluminescence of amorphous and crystalline silicon nanoclusters in silicon nitride and oxide superlattices

详细信息    查看全文

• 作者：D. V. Shuleiko ; S. V. Zabotnov ; D. M. Zhigunov ; A. A. Zelenina…
• 刊名：Semiconductors
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：51
• 期：2
• 页码：196-202
• 全文大小：
• 刊物类别：Physics and Astronomy
• 刊物主题：Magnetism, Magnetic Materials; Physics, general;
• 出版者：Pleiades Publishing
• ISSN：1090-6479
• 卷排序：51

文摘

The photoluminescence properties of silicon nitride and oxide superlattices fabricated by plasmaenhanced chemical vapor deposition are studied. In the structures annealed at a temperature of 1150°C, photoluminescence peaks at about 1.45 eV are recorded. The peaks are defined by exciton recombination in silicon nanocrystals formed upon annealing. Along with the 1.45-eV peaks, a number of peaks defined by recombination at defects at the interface between the nanocrystals and silicon-nitride matrix are detected. The structures annealed at 900°C exhibit a number of photoluminescence peaks in the range 1.3–2.0 eV. These peaks are defined by both the recombination at defects and exciton recombination in amorphous silicon nanoclusters formed at an annealing temperature of 900°C. The observed features of all of the photoluminescence spectra are confirmed by the nature of the photoluminescence kinetics.