Towards wafer-scale integration of high repetition rate passively mode-locked surface-emitting semiconductor lasers

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• 作者：D. Lorenser ; H.J. Unold ; D.J.H.C. Maas ; A. Aschwanden ; R. Grange ; R. Paschotta ; D. Ebling ; E. Gini and U. Keller
• 刊名：Applied Physics B: Lasers and Optics
• 出版年：2004
• 出版时间：December 2004
• 年：2004
• 卷：79
• 期：8
• 页码：927-932
• 全文大小：318 KB
• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Electromagnetism, Optics and Lasers
  Physical Chemistry
  Laser Technology and Physics and Photonics
  Quantum Optics, Quantum Electronics and Nonlinear Optics
  Optical Spectroscopy and Ultrafast Optics
  Physics and Applied Physics in Engineering
  
• 出版者：Springer Berlin / Heidelberg
• ISSN：1432-0649

文摘

One of the most application-relevant milestones that remain to be achieved in the field of passively mode-locked surface-emitting semiconductor lasers is the integration of the semiconductor absorber into the gain structure, enabling the realization of ultra-compact high-repetition-rate laser devices suitable for wafer-scale integration. We have recently succeeded in fabricating the key element in this concept, a quantum-dot-based saturable absorber with a very low saturation fluence, which for the first time allows stable mode locking of surface-emitting semiconductor lasers with the same mode areas on gain and absorber. Experimental results at high repetition rates of up to 30 GHz are shown.