Study of the Resistive Switching Effect in Chromium Oxide Thin Films by Use of Conductive Atomic Force Microscopy
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- 作者：Kim Ngoc Pham ; Minsu Choi ; Cao Vinh Tran…
- 关键词：Chromium oxide ; resistive switching ; electrochemical redox reactions ; C ; AFM ; Ag filament
- 刊名：Journal of Electronic Materials
- 出版年：2015
- 出版时间：October 2015
- 年：2015
- 卷：44
- 期：10
- 页码：3395-3400
- 全文大小：1,467 KB
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Minsu Choi (2)
Cao Vinh Tran (3)
Trung Do Nguyen (1)
Van Hieu Le (1)
Taekjib Choi (4)
Jaichan Lee (2)
Bach Thang Phan (1) (3)
1. Faculty of Materials Science, University of Science, Vietnam National University, Ho Chi Minh City, Vietnam
2. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Republic of Korea
3. Laboratory of Advanced Materials, University of Science, Vietnam National University, Ho Chi Minh City, Vietnam
4. Hybrid Materials Research Center and Faculty/Institute of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, Republic of Korea - 刊物类别：Chemistry and Materials Science
- 刊物主题：Chemistry
Optical and Electronic Materials
Characterization and Evaluation Materials
Electronics, Microelectronics and Instrumentation
Solid State Physics and Spectroscopy - 出版者：Springer Boston
- ISSN：1543-186X
文摘
Reversible resistive switching of Cr2O3 films was studied by use of conductive atomic force microscopy. Resistive switching in Cr2O3 films occurs as a result of Ag filament paths formed during electrochemical redox reactions. A large memory density of 100 Tbit/sq. inch was achieved with a small filament diameter of 2.9 nm under the action of a compliance current of 10 nA. A fast switching speed of 10 ns, high scalability, and low set/reset currents suggest that Cr2O3-based resistive memory is suitable for nanoscale devices. Keywords Chromium oxide resistive switching electrochemical redox reactions C-AFM Ag filament