Chemical vapor deposition growth of large-scale hexagonal boron nitride with controllable orientation

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• 作者：Xiuju Song ; Junfeng Gao ; Yufeng Nie ; Teng Gao ; Jingyu Sun ; Donglin Ma…
• 关键词：hexagonal boron nitride ; Cu foil ; domain size ; orientation ; chemical vapor deposition (CVD)
• 刊名：Nano Research
• 出版年：2015
• 出版时间：October 2015
• 年：2015
• 卷：8
• 期：10
• 页码：3164-3176
• 全文大小：3,003 KB
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• 作者单位：Xiuju Song (1)
  Junfeng Gao (3)
  Yufeng Nie (1)
  Teng Gao (1)
  Jingyu Sun (1)
  Donglin Ma (1)
  Qiucheng Li (1)
  Yubin Chen (1)
  Chuanhong Jin (4)
  Alicja Bachmatiuk (5)
  Mark H. Rümmeli (6) (7)
  Feng Ding (3)
  Yanfeng Zhang (1) (2)
  Zhongfan Liu (1)
  
  1. Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Low Dimensional Carbon Materials, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China
  3. Institute of Textiles and Clothing, Hong Kong Polytechnic University, Hong Kong, China
  4. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
  5. Centre of Polymer and Carbon Materials, Polish Academy of Sciences, M. Curie-Sklodowskiej 34, Zabrze, 41-819, Poland
  6. Department of Energy Science, Department of Physics, Sungkyunkwan University, Suwon, 440-746, Republic of Korea
  7. IBS Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Daejon, 305-701, Republic of Korea
  2. Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, China
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chinese Library of Science
  Chemistry
  Nanotechnology
  
• 出版者：Tsinghua University Press, co-published with Springer-Verlag GmbH
• ISSN：1998-0000

文摘

Chemical vapor deposition (CVD) synthesis of large-domain hexagonal boron nitride (h-BN) with a uniform thickness is very challenging, mainly due to the extremely high nucleation density of this material. Herein, we report the successful growth of wafer-scale, high-quality h-BN monolayer films that have large single-crystalline domain sizes, up to ~72 μm in edge length, prepared using a folded Cu-foil enclosure. The highly confined growth space and the smooth Cu surface inside the enclosure effectively reduced the precursor feeding rate together and induced a drastic decrease in the nucleation density. The orientation of the as-grown h-BN monolayer was found to be strongly correlated to the crystallographic orientation of the Cu substrate: the Cu (111) face being the best substrate for growing aligned h-BN domains and even single-crystalline monolayers. This is consistent with our density functional theory calculations. The present study offers a practical pathway for growing high-quality h-BN films by deepening our fundamental understanding of the process of their growth by CVD.