Energy-storage performance and pyroelectric energy harvesting effect of PNZST antiferroelectric thin films

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• 作者：Xiaolin Wang ; Xihong Hao ; Qiwei Zhang…
• 刊名：Journal of Materials Science: Materials in Electronics
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：28
• 期：2
• 页码：1438-1448
• 全文大小：
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Optical and Electronic Materials; Characterization and Evaluation of Materials;
• 出版者：Springer US
• ISSN：1573-482X
• 卷排序：28

文摘

In this work, (111)-oriented (Pb_0.99Nb_0.02)(Zr, Sn, Ti)_0.98O₃ (PNZST) antiferroelectric thin films, which located in the tetragonal phase region (PNZST_T) and the orthorhombic phase region (PNZST_O), respectively, were successfully fabricated on platinum-buffered silicon substrates by radio-frequency magnetron sputtering technique. The microstructure, dielectric properties, electric field induced phase transition, associated with the energy-storage performance and pyroelectric energy harvesting behavior (by Olsen cycle) were studied systemically. The PNZST_T thin film showed a diffused field-induced antiferroelectric–ferroelectric (AFE–FE) phase switching with a slim double hysteresis loop, while the PNZST_O film demonstrated an AFE–FE phase switching with a square double hysteresis loop. A maximum recoverable energy-storage density of 16.4 and 12.4 J/cm3 were obtained in the PNZST_T and PNZST_O film, respectively. Moreover, a huge harvested energy density per cycle of W = 7.35 and 5.35 J/cm3 was also predicted in the PNZST_T and PNZST_O film at 1 kHz, respectively. The good energy-storage performance and giant thermal-electrical energy harvesting effect of the PNZST antiferroelectric thin films maybe make a great impact on the modern energy-storage technology and the thermal-electrical energy harvesting applications.