Investigation of transient responses of nanoscale transistors by deterministic solution of the time-dependent BTE

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• 作者：Shaoyan Di ; Kai Zhao ; Tiao Lu ; Gang Du ; Xiaoyan Liu
• 刊名：Journal of Computational Electronics
• 出版年：2016
• 出版时间：September 2016
• 年：2016
• 卷：15
• 期：3
• 页码：770-777
• 全文大小：1,632 KB
• 刊物类别：Engineering
• 刊物主题：Electronic and Computer Engineering
  Optical and Electronic Materials
  Mathematical and Computational Physics
  Applied Mathematics and Computational Methods of Engineering
  Mechanical Engineering
  
• 出版者：Springer Netherlands
• ISSN：1572-8137
• 卷排序：15

文摘

In this work, the transient characteristics of nanoscale field-effect transistors (FETs) have been investigated using a deterministic solver based on the time-dependent multi-subband Boltzmann transport equation (BTE). The response to a step signal superimposed on the gate or drain electrode is simulated. The transient process can be understood as a combination of electrostatic and transport relaxation. The extracted transient relaxation time for the drain current, which is unrelated to the direct-current (DC) shift, is important for transient device modeling.KeywordsTransient simulationBoltzmann transport equation Transient relaxation timeUTBB MOSFETs