Study of polymorphous silicon as thermo-sensing film for infrared detectors

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• 作者：M. Moreno^a ; ^{mariomoreno78@hotmail.com} ; ^{mmoreno@inaoep.mx} ; A. Torres^a ; R. Ambrosio^b ; E. Torres^c ; P. Rosales^a ; C. Zuñ ; iga^a ; C. Reyes-Betanzo^a ; W. Calleja^a ; J. De la Hidalga^a ; K. Monfil^b
• 关键词：Polymorphous silicon ; Amorphous silicon ; Microbolometers
• 刊名：Materials Science and Engineering ; B
• 出版年：2012
• 期刊代码：76_09215107
• 类别：ch
• 出版时间：5 June, 2012
• 卷：177
• 期：10
• 页码：756-761
• 文件大小：1375 K

摘要

In this work we have deposited and characterized pm-Si:H thin films obtained by plasma deposition. Our aim is to use pm-Si:H as thermo-sensing element for infrared (IR) detectors based on un-cooled microbolometers. We have studied the electrical characteristics of pm-Si:H that are figures of merit important for IR detection, as activation energy, thermal coefficient of resistance (TCR), room temperature conductivity (蟽_RT) and responsivity under IR radiation. The influence of the substrate temperature (200 掳C and 300 掳C) on the pm-Si:H characteristics has been also studied. Our results shown that pm-Si:H is an excellent candidate to be used as thermo-sensing film for microbolometers, due to its large activation energy and TCR, with an improved 蟽_RT.