Towards the creation of quantum dots using FIB technology

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• 作者：P. Kitslaar ; M. Strassner ; I. Sagnes ; E. Bourhis ; X. Lafosse ; C. Ulysse ; C. David ; R. Jede ; L. Bruchhaus and J. Gierak
• 关键词：Focused ion beam ; Selective epitaxy ; Quantum dots
• 刊名：Microelectronic Engineering
• 出版年：2006
• 期刊代码：91_01679317
• 类别：cp
• 出版时间：April-September 2006
• 卷：83
• 期：4-9
• 页码：811-814
• 文件大小：285 K

摘要

The discrete nature of the electronic states of InAs quantum dots (QDs) is very promising for the realisation of original and high performance optoelectronic devices like QD lasers. One application of these QDs is the placement of a single QD within a vertical cavity emitting laser. The creation of these devices requires a well defined position of the QDs which are usually grown as Stranski–Krastanov self-assembled structures. However, structures grown using this technique are randomly distributed. In this work, we report our efforts to address this problem using FIB technology to determine the exact location prior epitaxial growth.