Effects of γ-ray irradiation on the C–V and G/ω–V characteristics of Al/SiO₂/p-Si (MIS) structures

详细信息	查看全文 | 推荐本文 |

• 作者：İ ; lbilge Dö ; kme ; Perihan Durmuş ; Ş ; emsettin Altı ; ndal
• 关键词：γ ; -ray effects ; Schottky diodes ; C– ; V and G/ω ; – ; V characteristics ; Series resistance ; Interface states
• 刊名：Nuclear Instruments and Methods in Physics Research Section B ; Beam Interactions with Materials and Atoms
• 出版年：2008
• 期刊代码：42_0168583x
• 类别：ph
• 出版时间：March 2008
• 卷：266
• 期：5
• 页码：791-796
• 文件大小：203 K

摘要

The effect of the ⁶⁰C_o (γ-ray) exposure on the electrical characteristics of Al/SiO₂/p-Si (MIS) structures has been investigated using capacitance–voltage (C–V) and conductance–voltage (G/ω–V) measurements. The MIS structures were stressed with a bias of 0 V during ⁶⁰C_o γ-sources irradiation with the total dose range from 0 to 25 kGy. The C–V and G/ω–V characteristics were measured at 500 kHz and room temperature before and after ⁶⁰C_o γ-ray irradiation. The results indicated that γ-irradiation caused an increase in the barrier height Φ_B, interface states N_ss and depletion layer width W_D obtained from reverse bias C–V measurements. The series resistance R_s profile for various radiation doses was obtained from forward and reverse bias C–V and G/ω–V measurements. Both C–V and G/ω–V characteristics indicate that the total dose radiation hardness of MIS structures may be limited by the decisive properties of the SiO₂/Si interface to radiation-induced damage. After γ-irradiation, the decrease in capacitance of MIS structure results in the increase in the semiconductor depletion width.