NROM^TM––a new technology for non-volatile memory products

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• 作者：Bloom ; Ilan ; Pavan ; Paolo ; Eitan ; Boaz
• 关键词：Non-volatile memory ; NROM^TM ; Multi-bit per cell ; Two-bit per cell ; Flash ; EEPROM ; Embedded non-volatile memories
• 刊名：Solid-State Electronics
• 出版年：2002
• 期刊代码：73_00381101
• 类别：ph
• 出版时间：November, 2002
• 卷：46
• 期：11
• 页码：1757-1763
• 文件大小：582 K

摘要

NROM^TM––is a new technology for non-volatile memories (NVMs); it offers three major improvements relative to the Floating Gate technology: one technology for all NVM products (Flash, EEPROM, ROM and Embedded), higher density (2.5F²/bit in Flash, where F is the feature size of the process), and simpler process with reduced number of masks without any “exotic” materials. The NROM^TM cell is based on localized charge trapping above the junction edge, storing two physically separated bits per cell. Performance of new NVM NROM^TM based products show endurance up to 100 K with retention of 10 years at 150 °C.