基于微硅热丝的热流式加速度传感器
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  • 英文篇名:A Heat Flow Acceleration Sensor Based on Micro Silicon Hot Wire
  • 作者:王欢 ; 李以贵 ; 蔡金东 ; 吕曈 ; 吴文渊
  • 英文作者:Wang Huan;Li Yigui;Cai Jindong;Lü Tong;Wu Wenyuan;College of Sciences,Shanghai Institute of Technology;School of Mechanical Engineering,Shanghai Institute of Technology;
  • 关键词:微硅热丝 ; 热流式 ; 硅热阻效应 ; 加速度传感器 ; 微纳加工技术
  • 英文关键词:micro silicon hot wire;;heat flow;;silicon thermal resistance effect;;acceleration sensor;;micro-nano processing technology
  • 中文刊名:BDTQ
  • 英文刊名:Micronanoelectronic Technology
  • 机构:上海应用技术大学理学院;上海应用技术大学机械工程学院;
  • 出版日期:2018-10-11
  • 出版单位:微纳电子技术
  • 年:2018
  • 期:v.55;No.498
  • 基金:国家自然科学基金资助项目(51035005);; 上海应用技术大学光电传感检测系统协同创新平台资助项目(10210Q180008);; 上海市联盟计划项目(LM201712);; 上海市农委重点项目子项目
  • 语种:中文;
  • 页:BDTQ201811004
  • 页数:7
  • CN:11
  • ISSN:13-1314/TN
  • 分类号:22-27+45
摘要
微加速度传感器由微压电泵驱动的连续循环密闭气流流路、硅热丝传感器以及惠斯登电桥测量电路三部分组成。利用硅热丝可以检测射流气体偏转引起的电阻变化,并通过惠斯登电桥电路测量出对应的加速度。基于硅热阻效应原理和微纳加工技术,设计和制备了一种成本低、体积小、寿命长、耐冲击和振动的热流式微加速度传感器。利用ANSYS软件进行仿真,分析了连续循环密闭气流的流速分布图。基于光刻、硅刻蚀和键合等微纳加工技术,在绝缘衬底上的硅(SOI)基板上制备了基于微硅热丝的加速度传感器。经测试,硅丝(长400μm×宽4μm×高2μm)在室温下电阻为45 kΩ,电阻温度系数(TCR)为4.6×10-3/℃,传感器X和Y两个方向上的灵敏度为8 mV/g。使用该方法制备的热流式传感器具有体积小、耐冲击和灵敏度高等优势。
        The micro-acceleration sensor is composed of a continuously circulating closed air flow path driven by a micro-piezoelectric pump,a silicon hot wire sensor and a Wheatstone bridge measuring circuit.The resistance variation caused by the deflection of the jet gas was detected with the silicon hot wire,and the corresponding acceleration was measured by the Wheatstone bridge circuit.Based on the principle of the silicon thermal resistance effect and micro-nano processing technology,a heat flow micro-acceleration sensor with low cost,small size,long life,shock resistance and vibration resistance was designed and prepared.The ANSYS software was used to simulate,and the flow velocity distribution diagram of the continuous circulating closed airflow was analyzed.Based on lithography,silicon etching,bonding and other micro-nano processing technology,an acceleration sensor based on the micro silicon hot wire was fabricated on the silicon-on-insulator(SOI)substrate.According to the test results,the silicon filament(400μm length×4μm width×2μm height)has a resistance of 45 kΩat room temperature,a temperature coefficient of resistance(TCR)of 4.6×10-3/℃,and a sensitivity of 8 mV/gin the direction Xor Y of the sensor.The heat flow sensor prepared by the method has the advantages of small volume,impact resistance and high sensitivity.
引文
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