在蓝宝石衬底上外延生长ZnGa_2O_4纳米线及其表征
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摘要
使用一种简单的化学气相沉积法成功地在c面蓝宝石衬底上外延生长了整齐排列的ZnGa_2O_4单晶纳米线。研究了在不同生长温度和生长压力下外延生长ZnGa_2O_4纳米线,并使用XRD,SEM和TEM对产物进行了表征。结果表明,在生长条件为980℃和100 Torr时,可以外延生长出整齐排列的ZnGa_2O_4纳米线。所制备的ZnGa_2O_4纳米线直径为60～150 nm,并遵循Au催化的VLS生长机制沿其四个结晶学方向在蓝宝石上外延生长。分析了纳米线沿四个方向生长的原因,并对纳米线的光致发光性能进行了探讨。
Well-aligned single-crystalline ZnGa_2O_4 nanowires were successfully epitaxially grown on c-plane sapphire substrate by a convenient chemical vapor deposition( CVD) method. Different growth temperatures and growth pressures to epitaxially grow ZnGa_2O_4 were investigated and the as-prepared samples were characterized by XRD,SEM,and TEM. It was found that well-aligned ZnGa_2O_4 nanowires can be epitaxially grown on c-plane sapphire substrate at 980 ℃ and 100 Torr. The asprepared ZnGa_2O_4 nanowires have a diameter of 60-150 nm,and epitaxially grow in four crystallographic directions following the Au-catalyzed VLS growth mechanism on the sapphire. The mechanism for the growth of nanowires in four directions was disscussed,and the photoluminescence properties of ZnGa_2O_4 nanowires were characterized.
Well-aligned single-crystalline ZnGa_2O_4 nanowires were successfully epitaxially grown on c-plane sapphire substrate by a convenient chemical vapor deposition( CVD) method. Different growth temperatures and growth pressures to epitaxially grow ZnGa_2O_4 were investigated and the as-prepared samples were characterized by XRD,SEM,and TEM. It was found that well-aligned ZnGa_2O_4 nanowires can be epitaxially grown on c-plane sapphire substrate at 980 ℃ and 100 Torr. The asprepared ZnGa_2O_4 nanowires have a diameter of 60-150 nm,and epitaxially grow in four crystallographic directions following the Au-catalyzed VLS growth mechanism on the sapphire. The mechanism for the growth of nanowires in four directions was disscussed,and the photoluminescence properties of ZnGa_2O_4 nanowires were characterized.
引文
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[3] Xu L,Su Y,Zhou Q T,et al. Self-assembled Catalyst Growth and Optical Properties of Single-crystalline Zn Ga2O4Nanowires[J]. Cryst. Growth Des. 2007,7:810-814.
[4] Minami T,Maeno T,Kuroi Y,et al. High-luminance Green-emitting Thin-film Electroluminescent Devices Using ZnGa2O4:Mn Phosphor[J].Jpn. J. Appl. Phys. 1995,34:L684-L687.
[5] Safeera T A,Khanal R,Medvedeva J E,et al. Low Temperature Synthesis and Characterization of Zinc Gallate Quantum Dots for Optoelectronic Applications[J]. J. Alloys Compd. 2018,740,567-573.
[6] Chen I C,Lin S S,Lin T J,et al. The Assessment for Sensitivity of a NO2Gas Sensor with ZnGa2O4/Zn O Core-shell Nanowires--a Novel Approach[J]. Sensors 2010,10:3057-72.
[7] Lou Z,Li L D,Shen G Z. High-performance Rigid and Flexible Ultraviolet Photodetectors with Single-crystalline ZnGa2O4Nanowires[J]. Nano Res. 2015,8:2162-2169.
[8] Hrong R H,Zeng Y Y,Wang W K,et al. Transparent Electrode Design for Al Ga N Deep-ultraviolet Light-emitting Diodes[J]. Opt. Express2017,25:32206-32213.
[9] Tien L C,Tseng C C,Chen Y L,et al. Direct Vapor Transport Synthesis of ZnGa2O4Nanowires with Superior Photocatalytic Activity[J]. J.Alloys Compd. 2013,555:325-329.
[10] Lei M,Hu Q R,Wang X,et al. Facile Route to Straight ZnGa2O4Nanowires and Their Cathodoluminescence Properties[J]. J. Alloys Compd.2010,489:663-666.
[11] Yuan Y P,Du W M,Qian X F. ZnxGa2O3+x(0x1)Solid Solution Nanocrystals:Tunable Composition and Optical Properties[J]. J.Mater. Chem. 2012,22:653-659.
[12] Wang L L,Hou Z Y,Quan Z W,et al. Preparation and Luminescence Properties of Mn2+-doped ZnGa2O4Nanofibers via Electrospinning Process[J]. Mater. Res. Bull. 2009,44:1978-1983.
[13] Du Y X,Li G C. Synthesis of Ga-riched Zinc Gallate Nanowires by Reactive Evaporation and the Cathodoluminescence Properties of Individual Nanowires[J]. Mater. Res. Bull. 2010,45:1092-1095.
[14] Horng R H,Huang C Y,Ou S L,et al. Epitaxial Growth of ZnGa2O4:a New,Deep Ultraviolet Semiconductor Candidate[J]. Cryst. Growth Des. 2017,17:6071-6078.
[15] Zhang X T,Rao Y Y,Liang Y,et al. Synthesis of Octahedral Zn Ga2O4Particles and Their Field-emission Properties[J]. J. Phys. D:Appl.Phys. 2008,41:095104.
[16] Li D R,Wang Y H,Xu K,et al. Persistent Luminescent and Photocatalytic Properties of ZnxGa2O3+x(0. 8x1)Phosphors[J]. Rsc Adv.2015,5(27):20972-20975.
[17] Bae S Y,Seo H W,Na C W,et al. Synthesis of Blue-light-emitting ZnGa2O4Nanowires Using Chemical Vapor Deposition[J]. Chem. Commun.2004,16(16):1834-1835.
[18] Zou L,Xiang X,Wei M,et al. Single-crystalline ZnGa2O4Spinet Phosphor via a Single-source Inorganic Precursor Route[J]. Inorg. Chem.2008,47(4):1361-1369.