无源MEMS压力开关的设计与制备
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摘要
为了克服传统机械式和电子式压力开关的体积大、制作工艺复杂以及不易与后续电路集成等缺点,论文采用具有金属引线台阶覆盖能力的玻璃浆料封装技术进行了无源MEMS压力开关的设计和制备。设计的无源MEMS压力开关的整体结构方案主要包括硅盖板上的压力敏感膜、硅岛、上电极和微阻挡凸台以及玻璃基底上的玻璃浆料和下电极。通过仿真优化了压力敏感膜、硅岛和上下电极的关键尺寸。经过三次湿法腐蚀工艺流程制得了双阻挡凸台、硅岛和感压膜片。通过玻璃浆料热压工艺将硅盖片、玻璃基底和金属引线三者键合成一体,工艺结果显示双阻挡凸台的高度和感压膜片的厚度很好地控制在8μm和50μm,而且经测试,MEMS压力开关的阈值压力为125kPa。
In order to overcome the shortcomings of traditional mechanical and electronic pressure switches,such as the production process is complex and it is difficult to integrate with the follow-up circuit,bulky and so on,the design and preparation of passive MEMS pressure switch were developed by using glass frit encapsulation technology with metal lead coverage in this paper.The overall structure of the passive MEMS pressure switch was designed to include the pressure sensitive film,the silicon island and the upper electrode on the silicon cover and the micro-barrier bumps,the glass paste and the lower electrode on the glass substrate.The key dimensions of pressure sensitive film,silicon islands and upper and lower electrodes were optimized by simulation.After three wet etching processes,double barrier bump,silicon island and pressure sensitive film were fabricated.The silicon cover,the glass substrate and the metal lead were then bonded together as a whole by glass frit thermal-pressure bonding process.The results show that the height of the double-barrier bumps and the thickness of the pressure-sensitive film are well controlled at 8μm and 50μm,respectively.And the threshold pressure of the MEMS pressure switch is 125 kPa.
In order to overcome the shortcomings of traditional mechanical and electronic pressure switches,such as the production process is complex and it is difficult to integrate with the follow-up circuit,bulky and so on,the design and preparation of passive MEMS pressure switch were developed by using glass frit encapsulation technology with metal lead coverage in this paper.The overall structure of the passive MEMS pressure switch was designed to include the pressure sensitive film,the silicon island and the upper electrode on the silicon cover and the micro-barrier bumps,the glass paste and the lower electrode on the glass substrate.The key dimensions of pressure sensitive film,silicon islands and upper and lower electrodes were optimized by simulation.After three wet etching processes,double barrier bump,silicon island and pressure sensitive film were fabricated.The silicon cover,the glass substrate and the metal lead were then bonded together as a whole by glass frit thermal-pressure bonding process.The results show that the height of the double-barrier bumps and the thickness of the pressure-sensitive film are well controlled at 8μm and 50μm,respectively.And the threshold pressure of the MEMS pressure switch is 125 kPa.
引文
[1]张谦,王焱秋.一种基于MEMS技术的压力开关:中国,101964272B[P].2012-09-26.ZHANG Q,WANG Y Q.Pressure switch based on micro-electromechanical system technology:CN,101964272B[P].2012-09-26.(in Chinese)
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[3]BALAJI K,BARANICHANDAR K.Design and analysis of MEMS switch for RF applications[J].International Journal of Scientific Research and Management,2015,3(1):1931-1935.
[4]MAJUMDER S,LAMPEN J,MORRISON R,et al..MEMS switches[J].IEEE Instrumentation&Measurement Magazine,2003,6(1):12-15.
[5]SUN J F,LI Z Q,ZHU J,et al..Design of DCcontact RF MEMS switch with temperature stability[J].AIP Advances,2015,5(4):041313.
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[7]HILTMANN K,LANG W.Optimization of micromachined membrane switches[J].Journal of Micromechanics and Microengineering,1997,7(3):240-243.
[8]HILTMANN K,WOLF E,SANDMAIER H.Hybrid micromachined push-button switches[C].Proceedings of the 49th IEEE Holm Conference on Electrical Contacts,IEEE,2003:219-222.
[9]杨雪梅.大电流密度器件的欧姆接触[J].半导体光电,2002,23(4):274-276.YANG X M.Ohmic contact of high-current-density devices[J].Semiconductor Optoelectronics,2002,23(4):274-276.(in Chinese)
[10]许薇,王玉传,罗乐.玻璃浆料低温气密封装MEMS器件研究[J].功能材料与器件学报,2005,11(3):343-346.XU W,WANG Y CH,LUO L.Wafer-level hermetic package of MEMS by glass solder at low temperature[J].Journal of Functional Materials and Devices,2005,11(3):343-346.(in Chinese)
[11]刘益芳,王凌云,孙道恒,等.玻璃浆料键合中的孔洞抑制和微复合调控[J].光学精密工程,2016,24(4):780-787.LIU Y F,WANG L Y,SUN D H,et al..Void suppression and micro composite regulation in glass frit bonding[J].Opt.Precision Eng.,2016,24(4):780-787.(in Chinese).
[12]LIU Y F,CHEN D E,LIN L W,et al..Glass frit bonding with controlled width and height using a two-step wet silicon etching procedure[J].Journal of Micromechanics and Microengineering,2016,26(3):035018.
[13]SAN H S,ZHANG H,ZHANG Q,et al..Silicon-glass-based single piezoresistive pressure sensors for harsh environment applications[J].Journal of Micromechanics and Microengineering,2013,23(7):075020.
[14]曾毅波,王凌云,谷丹丹,等.超声技术在硅湿法腐蚀中的应用[J].光学精密工程,2009,17(1):166-171.ZENG Y B,WANG L Y,GU D D,et al..Application of ultrasonic technology to wet etching of silicon[J].Opt.Precision Eng.,2009,17(1):166-171.(in Chinese).
[2]REBEIZ G M,PATEL C D,HAN S K,et al..The search for a reliable MEMS switch[J].IEEE Microwave Magazine,2013,14(1):57-67.
[3]BALAJI K,BARANICHANDAR K.Design and analysis of MEMS switch for RF applications[J].International Journal of Scientific Research and Management,2015,3(1):1931-1935.
[4]MAJUMDER S,LAMPEN J,MORRISON R,et al..MEMS switches[J].IEEE Instrumentation&Measurement Magazine,2003,6(1):12-15.
[5]SUN J F,LI Z Q,ZHU J,et al..Design of DCcontact RF MEMS switch with temperature stability[J].AIP Advances,2015,5(4):041313.
[6]DE BRUIN D W,ALLEN H V,TERRY S C,et al..Electrically trimmable silicon micromachined pressure switch[J].Sensors and Actuators A:Physical,1990,21(1-3):54-57.
[7]HILTMANN K,LANG W.Optimization of micromachined membrane switches[J].Journal of Micromechanics and Microengineering,1997,7(3):240-243.
[8]HILTMANN K,WOLF E,SANDMAIER H.Hybrid micromachined push-button switches[C].Proceedings of the 49th IEEE Holm Conference on Electrical Contacts,IEEE,2003:219-222.
[9]杨雪梅.大电流密度器件的欧姆接触[J].半导体光电,2002,23(4):274-276.YANG X M.Ohmic contact of high-current-density devices[J].Semiconductor Optoelectronics,2002,23(4):274-276.(in Chinese)
[10]许薇,王玉传,罗乐.玻璃浆料低温气密封装MEMS器件研究[J].功能材料与器件学报,2005,11(3):343-346.XU W,WANG Y CH,LUO L.Wafer-level hermetic package of MEMS by glass solder at low temperature[J].Journal of Functional Materials and Devices,2005,11(3):343-346.(in Chinese)
[11]刘益芳,王凌云,孙道恒,等.玻璃浆料键合中的孔洞抑制和微复合调控[J].光学精密工程,2016,24(4):780-787.LIU Y F,WANG L Y,SUN D H,et al..Void suppression and micro composite regulation in glass frit bonding[J].Opt.Precision Eng.,2016,24(4):780-787.(in Chinese).
[12]LIU Y F,CHEN D E,LIN L W,et al..Glass frit bonding with controlled width and height using a two-step wet silicon etching procedure[J].Journal of Micromechanics and Microengineering,2016,26(3):035018.
[13]SAN H S,ZHANG H,ZHANG Q,et al..Silicon-glass-based single piezoresistive pressure sensors for harsh environment applications[J].Journal of Micromechanics and Microengineering,2013,23(7):075020.
[14]曾毅波,王凌云,谷丹丹,等.超声技术在硅湿法腐蚀中的应用[J].光学精密工程,2009,17(1):166-171.ZENG Y B,WANG L Y,GU D D,et al..Application of ultrasonic technology to wet etching of silicon[J].Opt.Precision Eng.,2009,17(1):166-171.(in Chinese).