液态金属汞在硅片表面的润湿行为研究
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  • 英文篇名:Study on Wetting Behavior of Liquid Mercury Droplet on Silicon Wafer Surface
  • 作者:李中杨 ; 马国鹭 ; 曾国英
  • 英文作者:Li Zhongyang;Ma Guolu;Zeng Guoying;Ministry of Education Key Laboratory of Testing Technology for Manufacturing Process,Southwest University of Science and Technology(SWUST);
  • 关键词:等离子刻蚀 ; 表面粗糙度 ; 滴液体积 ; 接触角 ; 润湿行为
  • 英文关键词:Plasma etching;;Surface roughness;;Droplet volume;;Contact angle;;Wetting behavior
  • 中文刊名:ZKKX
  • 英文刊名:Chinese Journal of Vacuum Science and Technology
  • 机构:西南科技大学制造过程测试技术省部共建教育部重点实验室;
  • 出版日期:2018-09-15
  • 出版单位:真空科学与技术学报
  • 年:2018
  • 期:v.38
  • 基金:国家自然科学基金项目(No.61505169);; 西南科技大学研究生创新基金(No.18ycx109)
  • 语种:中文;
  • 页:ZKKX201809014
  • 页数:4
  • CN:09
  • ISSN:11-5177/TB
  • 分类号:85-88
摘要
针对常温下的液体在固体表面的润湿行为研究。以液态金属汞为研究对象,采用真空等离子体刻蚀工艺制备不同表面形貌的硅片,研究不同硅片的润湿行为,并探究了液滴体积对润湿性的影响。利用金相电子显微镜、白光干涉三维形貌仪以及接触角测量仪分别对不同硅片的表面形貌、表面粗糙度以及润湿行为进行了测量与表征。结果表明:当液滴体积相同时,随硅片表面粗糙度Sa增大,接触角增大;当液滴体积为1μL,表面粗糙度为257.01μm时,测得静态接触角达到最大,为158.3°;而在同一形貌的硅片表面,当液滴体积由1增加到4μL时,硅片表面的接触角呈现逐渐减小的趋势,在致密的网状结构硅片表面,接触角减小的幅度最大,达到11.6°。为今后研究汞在不用材料表面的润湿行为具有一定的参考意义。
        We addressed the wetting behavior of liquid mercury on plasma-etched Si wafer surface. The influence of the surface roughness and mercury droplet volume on the wettability was investigated with metallurgical microscope,white light interferometer,3D profilometer and contact angle measurement. The results show that the surface roughness and Hg-droplet volume significantly affected the contact angle. The results show that the surface roughness and Hg-droplet volume had a major impact. To be specific,as the surface roughness increased,the contact angle of the mercury droplet with the same volume increased; the largest static contact angle reached 158. 3° when the surface roughness was 257. 01 μm and the volume was 1 μL; as the volume increased from 1 to 4 μL and the surface roughness remained to be the same,the contact angle gradually decreased,with a largest net decrease of 11. 6° on a dense "reticular"-structured Si wafer surface.
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