IrO_2/ZnO薄膜接触结构的制备及电学特性研究
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摘要
在氧化锌器件的应用中,高质量的金属/ZnO接触的制备是至关重要的问题。目前,在金属/ZnO接触的研究中,充当电极角色的多为不具有透明性的金属材料,使得氧化锌材料在光电子器件中的应用受到一定的限制。IrO2是一种既透明又导电的金属氧化物,具有较低的电阻率和较好的化学稳定性,其薄膜已被用作底电极和防热扩散层等。因此文中采用脉冲激光沉积方法(PLD)制备了IrO2/ZnO薄膜接触结构,用小角X射线衍射(XRD)对其进行表征,并测量该结构的电学特性。结果表明实验得到了生长良好的IrO2/ZnO薄膜接触结构,室温下为欧姆接触导电特性。
The preparation of the high-quality metal/ZnO contact is very crucial in ZnO device applications. At present,most of electrode roles are nontransparent materials in the metal/ZnO contact research,which makes the ZnO material application in optoelectronic devices limited to a certain extent. IrO2,as a transparent and conductive metallic oxide,has a low resistivity and good chemical stability,whose thin film has been used as the bottom electrode and heat-proof diffusion layer. The pulsed laser deposition(PLD)method is adopted in this paper to prepare the IrO2/ZnO thin film contact structure which is represented by means of the small angle X ray diffraction(XRD). The electrical properties of the structure are measured. The experimental results show that the well-grown IrO2/ZnO thin film contact structure is obtained,which has an Ohmic contact conduction property at room temperature.
The preparation of the high-quality metal/ZnO contact is very crucial in ZnO device applications. At present,most of electrode roles are nontransparent materials in the metal/ZnO contact research,which makes the ZnO material application in optoelectronic devices limited to a certain extent. IrO2,as a transparent and conductive metallic oxide,has a low resistivity and good chemical stability,whose thin film has been used as the bottom electrode and heat-proof diffusion layer. The pulsed laser deposition(PLD)method is adopted in this paper to prepare the IrO2/ZnO thin film contact structure which is represented by means of the small angle X ray diffraction(XRD). The electrical properties of the structure are measured. The experimental results show that the well-grown IrO2/ZnO thin film contact structure is obtained,which has an Ohmic contact conduction property at room temperature.
引文
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[9]雷一锋,蒋玉思.钛基二氧化铱涂层电极的节能分析[J].中国冶金,2016,26(6):61-64.LEI Yifeng,JIANG Yusi. Analysis on electric energy saving ofIrO2 coated titanium electrodes[J]. China metallurgy,2016,26(6):61-64.
[10]吴克跃,吴兴举.氮气压强对PLD制备ZnO薄膜形貌及光电性能的影响[J].人工晶体学报,2015,44(1):190-194.WU Keyue,WU Xingju. Effect of nitrogen pressure on themorphology and photoelectric properties of ZnO films pre-pared by PLD[J]. Journal of synthetic crystals,2015,44(1):190-194.
[2] JAMIL M A.脉冲激光沉积制备ZnO基量子阱及其光学性质研究[D].大连:大连理工大学,2016.JAMIL M A. Study of ZnO-based quantum well preparation us-ing pulsed laser deposition and its optical properties[D]. Da-lian:Dalian University of Technology,2016.
[3]许利刚,邱伟,陈润锋,等.ZnO电极修饰层在钙钛矿太阳能电池中的应用[J].物理化学学报,2018,34(1):36-48.XU Ligang,QIU Wei,CHEN Runfeng,et al. Application ofZnO electrode buffer layer in perovskite solar cells[J]. ActaPhysico-Chimica Sinica,2018,34(1):36-48.
[4]王晓慧.ZnO低维结构的制备及其光电特性研究[D].烟台:鲁东大学,2017.WANG Xiaohui. Research on preparation and photoelectric properties of ZnO low-dimensional structure[D]. Yantai:Ludong University,2017.
[5]黄志娟,喻志农,杨伟声,等.ZnO缓冲层对Mg0.3Zn0.7O紫外探测器的影响[J].半导体光电,2018,39(3):322-325.HUANG Zhijuan,YU Zhinong,YANG Weisheng,et al. Ef-fect of ZnO buffer layer on Mg0.3Zn0.7O ultraviolet detectors[J].Semiconductor optoelectronics,2018,39(3):322-325.
[6] HOU X,TAKAHASHI R,YAMAMOTO T,et al. Microstruc-ture analysis of IrO2 thin films[J]. Journal of crystal growth,2017,462:24-28.
[7] CAO H,CHEN M,WU L,et al. Electrochemical properties ofIrO2 active anode with TNTs interlayer for oxygen evolution[J].Applied surface science,2018,428:861-869.
[8] ZHANG Y,LI X,ZHANG M,et al. IrO2 nanoparticles highlydispersed on nitrogen-doped carbon nanotubes as an efficientcatalyst for high-performance Li-O2 batteries[J]. Ceramics international,2017,43(16):14082-14089.
[9]雷一锋,蒋玉思.钛基二氧化铱涂层电极的节能分析[J].中国冶金,2016,26(6):61-64.LEI Yifeng,JIANG Yusi. Analysis on electric energy saving ofIrO2 coated titanium electrodes[J]. China metallurgy,2016,26(6):61-64.
[10]吴克跃,吴兴举.氮气压强对PLD制备ZnO薄膜形貌及光电性能的影响[J].人工晶体学报,2015,44(1):190-194.WU Keyue,WU Xingju. Effect of nitrogen pressure on themorphology and photoelectric properties of ZnO films pre-pared by PLD[J]. Journal of synthetic crystals,2015,44(1):190-194.