多点实时光刻机光源照度均匀度检测系统设计
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摘要
提出了一种光刻机照度均匀度多点测量方法,该方法利用紫外增强PIN光电二极管,同时快速测量曝光机照面多点的光强,通过在传统电流-电压放大电路的基础上进行改进,同时使用复合放大的方法,大大提高了曝光机照度均匀度多点测量方法的重复性,使每一测量单点测量重复性控制在0.02mW/cm2。利用紫外增强PIN光电二极管光刻机光源进行实验,结果表明,多点测量一致性小于0.1mW/cm2,且检测的照度均匀性符合要求。
A multi-point measurement method for illuminance uniformity of lithography machines is proposed.The method of using ultraviolet(UV)enhanced PIN photodiode can rapidly measure the light intensity of the exposure machine,and the combination of improvement on the basis of traditional current-voltage amplifying circuit and composite amplification greatly improves the repeatability of exposure machine illuminance uniformity multi-point measurement method, and makes every single point measurement repeatability of measurement below0.02 mW/cm2.Experimental results show that with the use of UV enhanced PIN photodiode exposure machine light source,multi-point measurement consistency is less than 0.1 mW/cm2,and the detection of the illuminance uniformity meets the requirements.
A multi-point measurement method for illuminance uniformity of lithography machines is proposed.The method of using ultraviolet(UV)enhanced PIN photodiode can rapidly measure the light intensity of the exposure machine,and the combination of improvement on the basis of traditional current-voltage amplifying circuit and composite amplification greatly improves the repeatability of exposure machine illuminance uniformity multi-point measurement method, and makes every single point measurement repeatability of measurement below0.02 mW/cm2.Experimental results show that with the use of UV enhanced PIN photodiode exposure machine light source,multi-point measurement consistency is less than 0.1 mW/cm2,and the detection of the illuminance uniformity meets the requirements.
引文
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[3]Xu S.Theory and method for in-situ lens aberration measurement in optical lithographic tools based on image intensity[D].Wuhan:Huazhong University of Science and Technology,2016.许爽.基于成像光强的光刻机像差原位检测理论与方法研究[D].武汉:华中科技大学,2016.
[4]Wang J.Litho polyimide layer resist reduction and CD uniformity research[D].Tianjin:Tianjin University,2012.王军.光刻工艺中聚酰亚胺层光阻减量和线宽均匀性研究[D].天津:天津大学,2012.
[5]Zhao Y.Design of complex illumination optical system for deep ultraviolet lithography[D].Changchun:Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,China,2010.赵阳.深紫外光刻复杂照明光学系统设计[D].长春:中国科学院长春光学精密机械与物理研究所,2010.
[6]Yan J X,Fan W H,Li L W,et al.On-line monitoring methods for the exposure uniformity of the stepper[J].Semiconductor Inspection&Testing Technologies,2012,37(7):577-581.闫建新,范伟宏,李立文,等.光刻机曝光均匀性在线检测方法[J].半导体检测与测试技术,2012,37(7):577-581.
[7]Sun Y J,Wang Y F.Measurement of uniformity of illumination field using linear array CCD[J].China Measurement Technology,2003(4):26-32.孙玉杰,汪岳峰.利用线阵CCD测量照明光场均匀度[J].中国测试技术,2003(4):26-32.
[8]Liu X G,Li Y J,Gao J.Research for measuring the energy distribution uniformity of laser parallel light curtain[J].Electro-Optic Technology Application,2010,25(5):12-14.刘新刚,李仰军,高健.激光平行光幕光能分布均匀性测量研究[J].光电技术应用,2010,25(5):12-14.
[9]Shen X H,Yang L,He G X,et al.Measurement of image plane illumination non-uniformity of optical system in photoelectric equipment[J].Optics and Precision Engineering,2008,16(12):2531-2536.沈湘衡,杨亮,贺庚贤,等.光电测量设备光学系统的像面照度均匀性检测[J].光学精密工程,2008,16(12):2531-2536.
[10]Kang D,Yang H,Sha D,et al.Measurement of image plane illumination uniformity of photoelectric imaging system[C].International Symposium on Advanced Optical Manufacturing and Testing Technologies,2014:92822O.
[11]Cai H Y,Liu T G,Fu W Q,et al.A system for examining the illumination uniformity of camera imaging planes[J].Optical Technique,2000,26(5):392-394.蔡怀宇,刘铁根,傅维乔,等.一种照相机成像平面照度均匀度检测系统[J].光学技术,2000,26(5):392-394.
[12]Zhang Y,Zeng G Y,Hong Z G.Research of the silicon PIN diode detecting system[J].Nuclear Electronics&Detection Technology,2008,20(2):391-393.张燕,曾光宇,洪志刚.硅PIN光电二极管探测系统的研究[J].核电子学与探测技术,2008,20(2):391-393.
[13]Graeme J.Photodiode amplifiers and OP AMPsolutions[M].Beijing:Science Press,2012.Graeme J.光电二极管及其放大电路设计[M].北京:科学出版社,2012.
[14]Wilmar H.Input-output transfer function analysis of aphotometer circuit based on an operational amplifier[J].Sensors,2008,8(1):35-50.
[15]Xu S,Xu Y Z,Chen E G,et al.Study on the new models of high power LED current-voltage characteristics[J].Journal of Optoelectronics·Laser,2015,26(11):2076-2082.徐胜,徐玉珍,陈恩果,等.大功率LED伏安特性模型研究[J].光电子·激光,2015,26(11):2076-2082.
[16]Liu M,Yang Y Q.Instant measurement for physical parameter special distribution uniformity[J].Journal of Astronautic Metrology and Measurement,2001,21(6):56-61.刘民,杨亦强.均匀性的瞬态测量[J].宇航计测技术,2001,21(6):56-61.