SiO_2基底Nb原位掺杂MoS_2纳米薄膜的制备及场效应
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摘要
以氧化钼(MoO_3)、硫(S)和氯化铌(NbCl_5)作为前驱体,利用一锅两步化学气相沉积法,在SiO_2基底上大面积地生长连续性好、均匀负载的Nb-MoS_2薄膜结构。通过扫描电子显微镜(SEM)和原子力显微镜(AFM)表征可知薄层具有较好的连续性,同时使用拉曼光谱(Raman)、光致发光光谱(PL)和X射线光电子能谱(XPS)证实了掺杂后薄膜内部出现高达90 meV的蓝移现象。将薄膜制成场效应管(FET),并对其电学性能进行测试得出,场效应迁移率为1.22 cm~2·V~(-1)·s~(-1),电流开关比为10~5,并证实了当Nb掺杂入MoS_2薄膜后使得薄膜整体阻抗大幅降低,整体阻抗降低到66.67 kΩ,比未掺杂Nb的MoS_2薄膜降低了约40%。本工艺操作简单、成本低、重现率高,为制备高质量、大面积过渡金属掺杂的MoS_2薄膜光电学器件提供了新的途径。
In this study, large-area growth of Nb-MoS_2 layers on SiO_2 substrates using one-pot chemical vapor deposition via two steps was successfully achieved. For the first time, a facile, cost-effective and mass-scalable direct synthesis approach was designed for doping Nb into MoS_2 layers using MoO_3, sulfur(S) and NbCl_5 as precursors. The proposed process allowed retaining the uniformity of large area thin layers which are sui-table for device fabrication. The structural and optical properties of the resulting Nb-MoS_2 layers were systematically investigated. Scanning electron microscope(SEM), atomic force microscope(AFM), Raman, photoluminescence(PL) spectra and X-ray photoelectron spectroscopy(XPS) analyses confirmed the formation of continuous and crystalline few-layers MoS_2 and Nb-MoS_2. An obvious blue-shift of up to 90 meV in photoluminescence peaks was observed for samples with different grain sizes. The electrical properties of the as-prepared materials were evaluated by bottom-gate FETs. A field-effect mobility of 1.22 cm~2·V~(-1)·s~(-1) and a current on/off ratio of 10~5 were obtained. In particular, Nb-MoS_2 prepared by Nb doping greatly reduced the resistance of the film to 66.67 kΩ. These findings provide a novel route towards scaled-up synthesis of high-quality few-layered MoS_2 by transition-metal doping in TMDCs which are suitable for electronic and optoelectronic devices.
In this study, large-area growth of Nb-MoS_2 layers on SiO_2 substrates using one-pot chemical vapor deposition via two steps was successfully achieved. For the first time, a facile, cost-effective and mass-scalable direct synthesis approach was designed for doping Nb into MoS_2 layers using MoO_3, sulfur(S) and NbCl_5 as precursors. The proposed process allowed retaining the uniformity of large area thin layers which are sui-table for device fabrication. The structural and optical properties of the resulting Nb-MoS_2 layers were systematically investigated. Scanning electron microscope(SEM), atomic force microscope(AFM), Raman, photoluminescence(PL) spectra and X-ray photoelectron spectroscopy(XPS) analyses confirmed the formation of continuous and crystalline few-layers MoS_2 and Nb-MoS_2. An obvious blue-shift of up to 90 meV in photoluminescence peaks was observed for samples with different grain sizes. The electrical properties of the as-prepared materials were evaluated by bottom-gate FETs. A field-effect mobility of 1.22 cm~2·V~(-1)·s~(-1) and a current on/off ratio of 10~5 were obtained. In particular, Nb-MoS_2 prepared by Nb doping greatly reduced the resistance of the film to 66.67 kΩ. These findings provide a novel route towards scaled-up synthesis of high-quality few-layered MoS_2 by transition-metal doping in TMDCs which are suitable for electronic and optoelectronic devices.
引文
1 Xu M,Liang T,Shi M,et al.Chemical Reviews,2013,113(5),3766.
2 Zhang K,Feng S,Wang J,et al.Nano Letters,2015,15(10),6586.
3 Gao J,Kim Y D,Liang L,et al.Advanced Materials,2016,28(44),9735.
4 Suh J,Park T E,Lin D Y,et al.Nano Letters,2014,14(12),6976.
5 Lin Y C,Dumcenco D O,Komsa H P,et al.Advanced Materials,2014,26(18),2857.
6 Zeng H,Dai J,Yao W,et al.Nature Nanotechnology,2012,7(8),490.
7 Dolui K,Rungger I,Das Pemmaraju C,et al.Physical Review B,2013,88(7),4192.
8 Naveh D,Ramasubramaniam A.Physical Review B,2013,87(19),2624.
9 Ivanovskaya V V,Zobelli A,Gloter A,et al.Physical Review B,2008,78(13),134104.
10 Suh J,Park T E,Lin D Y,et al.Nano Letters,2014,14(12),6976.
11 Li H,Zhang G,Wang L.Journal of Physics D—Applied Physics,2016,49(9),095501.
12 Shi Y,Huang J K,Jin L,et al.Scientific Reports,2013,3(5),1839.
13 Sarkar D,Xie X,Kang J,et al.Nano Letters,2015,15(5),2852.
14 Yang L,Majumdar K,Liu H,et al.Nano Letters,2014,14(11),6275.
15 Lee Y H,Zhang X Q,Zhang W,et al.Advanced Materials,2012,24(17),2320.
16 Park M,Park Y,Chen X,et al.Advance Materials,2016,28,2556.
17 Yu Y,Li C,Liu Y,et al.Scientific Reports,2013,3(5),1866.
18 Lee C,Yan H,Brus L E,et al.ACS Nano,2010,4(5),2695.
19 Hai L,Yin Z,He Q,et al.Small,2012,8(1),63.
20 Zhang K,Feng S,Wang J,et al.Nano Letters,2015,15(10),6586.
21 Biesinger M C,Payne B P,Grosvenor A P,et al.Applied Surface Science,2011,257(7),2717.
22 Fujita T,Ito Y,Tan Y,et al.Nanoscale,2014,6(21),12458.
23 Mcguire G E,Schweitzer G K,Carlson T A.Chemischer Informations-dienst,DOI:10.1002/chin.197348010.
24 Zande A M V D,Huang P Y,Chenet D A,et al.Nature Materials,2013,12(6),554.
25 Duan X,Wang C,Shaw J C,et al.Nature Nanotechnology,2014,9(12),1024.
26 Ovchinnikov D,Allain A,Huang Y S,et al.ACS Nano,2014,8(8),8174.
27 Georgiou T,Jalil R,Belle B D,et al.Nature Nanotechnology,2013,8(2),100.
28 Huang P Y,Ruizvargas C S,Am V D Z,et al.Nature,2011,469(7330),389.
29 Mak K F,He K,Lee C,et al.Nature Materials,2013,12(3),207.
30 Gao J,Li L,Tan J,et al.Nano Letters,2016,16(6),3780.
31 Lin T W,Su C Y,Zhang X Q,et al.Small,2012,8(9),1384.
32 Kaasbjerg K,Thygesen K S,Jacobsen K W.Physical Review B,2012,85(11),115317.
33 Baugher B W H,Churchill H O H,Yang Y,et al.Nano Letters,2013,13(9),4212.
34 Hussain S,Shehzad M A,Vikraman D,et al.Nanoscale,2016,8(7),4340.
35 Das S R,Kwon J,Prakash A,et al.Applied Physics Letters,2015,106(8),147.
36 Yoon Y,Ganapathi K,Salahuddin S.Nano Letters,2011,11(9),3768.
37 Pu J,Yomogida Y,Liu K K,et al.Nano Letters,2012,12(8),4013.
38 Zhang J,Yu H,Chen W,et al.ACS Nano,2014,8(6),6024.
39 Xie S,Xu M,Liang T,et al.Nanoscale,2015,8(1),219.
2 Zhang K,Feng S,Wang J,et al.Nano Letters,2015,15(10),6586.
3 Gao J,Kim Y D,Liang L,et al.Advanced Materials,2016,28(44),9735.
4 Suh J,Park T E,Lin D Y,et al.Nano Letters,2014,14(12),6976.
5 Lin Y C,Dumcenco D O,Komsa H P,et al.Advanced Materials,2014,26(18),2857.
6 Zeng H,Dai J,Yao W,et al.Nature Nanotechnology,2012,7(8),490.
7 Dolui K,Rungger I,Das Pemmaraju C,et al.Physical Review B,2013,88(7),4192.
8 Naveh D,Ramasubramaniam A.Physical Review B,2013,87(19),2624.
9 Ivanovskaya V V,Zobelli A,Gloter A,et al.Physical Review B,2008,78(13),134104.
10 Suh J,Park T E,Lin D Y,et al.Nano Letters,2014,14(12),6976.
11 Li H,Zhang G,Wang L.Journal of Physics D—Applied Physics,2016,49(9),095501.
12 Shi Y,Huang J K,Jin L,et al.Scientific Reports,2013,3(5),1839.
13 Sarkar D,Xie X,Kang J,et al.Nano Letters,2015,15(5),2852.
14 Yang L,Majumdar K,Liu H,et al.Nano Letters,2014,14(11),6275.
15 Lee Y H,Zhang X Q,Zhang W,et al.Advanced Materials,2012,24(17),2320.
16 Park M,Park Y,Chen X,et al.Advance Materials,2016,28,2556.
17 Yu Y,Li C,Liu Y,et al.Scientific Reports,2013,3(5),1866.
18 Lee C,Yan H,Brus L E,et al.ACS Nano,2010,4(5),2695.
19 Hai L,Yin Z,He Q,et al.Small,2012,8(1),63.
20 Zhang K,Feng S,Wang J,et al.Nano Letters,2015,15(10),6586.
21 Biesinger M C,Payne B P,Grosvenor A P,et al.Applied Surface Science,2011,257(7),2717.
22 Fujita T,Ito Y,Tan Y,et al.Nanoscale,2014,6(21),12458.
23 Mcguire G E,Schweitzer G K,Carlson T A.Chemischer Informations-dienst,DOI:10.1002/chin.197348010.
24 Zande A M V D,Huang P Y,Chenet D A,et al.Nature Materials,2013,12(6),554.
25 Duan X,Wang C,Shaw J C,et al.Nature Nanotechnology,2014,9(12),1024.
26 Ovchinnikov D,Allain A,Huang Y S,et al.ACS Nano,2014,8(8),8174.
27 Georgiou T,Jalil R,Belle B D,et al.Nature Nanotechnology,2013,8(2),100.
28 Huang P Y,Ruizvargas C S,Am V D Z,et al.Nature,2011,469(7330),389.
29 Mak K F,He K,Lee C,et al.Nature Materials,2013,12(3),207.
30 Gao J,Li L,Tan J,et al.Nano Letters,2016,16(6),3780.
31 Lin T W,Su C Y,Zhang X Q,et al.Small,2012,8(9),1384.
32 Kaasbjerg K,Thygesen K S,Jacobsen K W.Physical Review B,2012,85(11),115317.
33 Baugher B W H,Churchill H O H,Yang Y,et al.Nano Letters,2013,13(9),4212.
34 Hussain S,Shehzad M A,Vikraman D,et al.Nanoscale,2016,8(7),4340.
35 Das S R,Kwon J,Prakash A,et al.Applied Physics Letters,2015,106(8),147.
36 Yoon Y,Ganapathi K,Salahuddin S.Nano Letters,2011,11(9),3768.
37 Pu J,Yomogida Y,Liu K K,et al.Nano Letters,2012,12(8),4013.
38 Zhang J,Yu H,Chen W,et al.ACS Nano,2014,8(6),6024.
39 Xie S,Xu M,Liang T,et al.Nanoscale,2015,8(1),219.